利用加速壽命試驗預測DRAM於超頻使用環境下之可靠度

Using ALT to Predict the Reliability of the DRAM Product under Overclocking Environment

王友隆(Yu-Lung Wang)

指導教授 ： 黃乾怡

國立臺北科技大學/管理學院/工業工程與管理系碩士班/碩士(2013年)

摘要

隨著高度自動化型態時代的來臨，企業對電腦的依賴持續增加，記憶體為電腦設備中最重要的配備之一，其損壞將造成電腦無法運作而可能導致企業重大損失。近年來，有漸多之消費者自行將記憶體產品超頻使用，以期在原有的硬體規格條件下達到較佳之效能，但也可能導致系統壽命減短。本研究提出雙應力加速壽命試驗，運用「溫度」結合「超頻」雙重加嚴參數之測試條件，求得產品於正常環境溫度25℃且2400 MHz超頻使用條件下之壽命分別為1,733小時、1,719小時及1,764小時，與依照業界標準MIL-HDBK-217給定活化能值計算得之產品壽命呈現約66%的差異，若該記憶體使用於一般電腦每日使用8小時，超頻使用條件下之壽命約為218天；若使用於伺服器類產品，每日使用24小時，其超頻使用條件下之壽命則僅約為73天。最後，將超頻視為加嚴參數，運用米勒定律預測得正常溫度環境且1600 MHz之正常使用頻率下之記憶體產品壽命為15,916小時，若使用於一般電腦和伺服器類產品，其壽命分別約為1,989天和663天。研究結果顯示，若使用者為提升電腦執行效能而自行將記憶體超頻使用，則將導致產品期望壽命減少約89%。

關鍵字

記憶體 ； 超頻 ； 活化能 ； 阿氏模型 ； 加速壽命試驗 ； 米勒定律

並列摘要

The level that a company rely on the computer system is rapid growing in the highly automatic manufacturing environment. The double-data-rate three synchronous dynamic random access memory (DDR3 SDRAM) is one of the most import device in the computer system. The failure of DRAM will result in computer system breakdown that may cause huge loss. Recently, there are more and more users adjust the memory device in an overclocking condition. The purpose is to achieve better performance from the on the existing hardware specifications. However, this may impact the reliability of the memory device. This study proposes a two-stress accelerated life test combining the temperature and overclocking. The result shows that the life time of memory device is in the range of 1719-1764 hours when used in the room temperature (25℃) and 2400MHz overclocking environment. The active energy calculated in this study results in a 66% difference in the memory device life time compared to that as provide by industry standard MIL-HDBK-217. We assume that the memory device may be used in a computer running 8 hour a day and server running 24 hour a day. The corresponding life time is 218 days and 73 days respectively in the condition of overclocking. Finally, this study adopts the overclocking as an accelerated condition. The life time calculated based on Miner's law is 15,916 hours in room temperature and normal clocking (1600 MHz) condition. When the memory device is used in regular computers and servers, the expected life times are 1,989 days and 663 days respectively. The life time reduces 89 % when the memory device is used in the overclocking condition.

並列關鍵字

memory ； overclocking ； active energy ； accelerated life test ； Arrhenius Equation

參考文獻

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