具矽穿孔與雙層原子晶片之整合應用於超高真空光學元件

Multi-Layer Atom Chips with Through Silicon Via for Ultra-high-vacuum Atom Glass Cell

林雲翔(Yun-Siang Lin)

指導教授 ： 莊賀喬

國立臺北科技大學/機電學院/製造科技研究所/碩士(2013年)

摘要

近年來在玻色-愛因斯坦冷凝聚(Bose-Einstein Condensation, BEC)實驗中慢慢地有許多研究團隊開始往原子晶片的方向發展，原子晶片是利用微機電技術在晶片表現上製作出微型導線，使導線通上電流後產生磁場，即可取代傳統BEC實驗上所需的大型線圈。在本研究中製作了多層原子晶片，其在導線圖型設計上較為彈性與廣泛，且在磁場設計上也必較多樣，對原子晶片在BEC實驗上使用更為方便，在本論文中使用SU-8負光阻作為上下層導線之絕緣層，且在電性量測結果中，上層與下層導線(線寬100μm)皆能承受5安培電流測試。本論文的另一重點為在多層的原子晶片中整合了矽穿孔(Through silicon via, TSV)技術，並利用陽極接合方法將原子晶片與Pyrex玻璃方管進行封裝，使其成為一個在BEC實驗上所需的真空腔體，這項技術的實現大大的縮小實驗空間，且在超高真空環境(9.5×〖10〗^(-10))下還能夠在晶片背面透過TSV將電流傳導至正面雙層原子晶片之上下層導線。在本論文中利用感應耦合離子蝕刻(ICP-RIE)在矽晶片上製作70μm穿孔，接著利用電鑄由下往上(Bottom up)的方式將TSV完整填滿銅金屬，並與晶片上之雙層導線連接，在封裝過程中，晶片上之導線與TSV也必須通過陽極接合所需的高溫(250℃)與高電壓(1000V)的環境測試，完成封裝後還能夠順利地通過氦氣測漏系統，並整個系統達到9.5×〖10〗^(-10)的超高真空環境。

關鍵字

玻色-愛因斯坦冷凝聚 ； 多層原子捕集晶片晶片 ； Through Silicon Via(TSV) ； 陽極接合 ； Ultra-High-Vicuum

並列摘要

In recent years, many research teams have begun to develop atom chips in BEC experiment. Atom chip is fabricated circuit on the wafer by MEMS that can provide magnetic with current and replace the large coils in traditional BEC experiment. In this study, we fabricated the multi-layer atom chip, which not only offers more flexibility on designing magnetic, also convenient in BEC experiment. In this thesis, negative photoresist SU-8 was chosen as the isolation layer between upper wire and bottom wire. From electric current test results, mote then 5 Amps of current can be successfully run through upper wire and bottom wire (wide 100μm). The other emphasis in this thesis, we integrated the multi-layer atom chip with through silicon via (TSV) technique, which will be anodic bonded to Pyrex glass cell and became chamber in BEC experiment. The realization of this technique can more reduce experimental space, and the high current can be applied to the metal wire on the atom chip through the TSV under ultra-high vacuum (HUV) environment. We fabricated feedthrough of 70μm by ICP-RIE and filled by the bottom-up copper electroplating. In packaging process, the atom chip and TSV need pass under the high temperature (250℃) and high electrical field (1000V) environment test. The atom chip cell can also pass a helium leaking detection and can be pumped to the ultra-high vacuum (9.5×10−10torr) after anodic bonding process.

並列關鍵字

Bose-Einstein Condensation ； Multi-Layer Atom Chips ； Through Silicon Via (TSV) ； Anodic bonding ； Ultra-High-Vacuum ； SU-8 ； Bottom up

參考文獻

[20] 翁崇文，單層/多層原子晶片的開發與製作應用於原子物理領域，碩士論文，國立台北科技大學機電整合研究所，100年7月

[19] 龍柏華"光電科技工業協進會"光連雙月刊 2003.11.48期 37-41

[21] 李相甫，具矽穿孔原子晶片之開發與製作應用於超高真空原子光學元件，碩士論文，國立台北科技大學機電整合研究所，101年7月

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