無電鍍沉積二氧化釕與釕複合薄膜之特性研究

Electroless Deposition of Composite Ruthenium Oxide and Ruthenium Films

陳境妤(Jing-Yu Chen)

指導教授 ： 吳樸偉

國立交通大學/工學院/材料科學與工程系所/碩士(2009年)

https://doi.org/10.6842/NCTU.2009.00278

摘要

35–300 nm非晶形二氧化釕及釕之複合薄膜已成功地以一新開發的鍍液配方，用無電鍍沉積的方式沉積在銅基板上。其無電鍍液之成份為：K2RuCl5•xH2O、NaNO2、NaOH、NaClO。不同鍍液製備步驟、三種不同濃度之NaNO2、及不同沉積時間為本研究之操作變因。本研究討論其反應方程式來說明無電鍍液之沉積機制。紫外光-可見光光譜圖之最大吸收波長的窄小分佈，顯示無電鍍液之穩定程度。此外，利用能量散佈光譜儀、掃描式電子顯微鏡、原子力顯微鏡、X光光電子譜儀、拉曼散射光譜儀來研究二氧化釕與釕複合薄膜之特性。結果顯示，以0.06 M NaNO2(aq)為配方之無電鍍液為最佳之參數。另外，藉由2小時氫氣還原在200℃下還原其複合薄膜，可得到結晶之金屬釕薄膜。而非晶形之複合薄膜，在2小時的氬氣高溫退火400℃的環境下可得結晶之二氧化釕與釕之複合薄膜。

關鍵字

二氧化釕 ； 釕 ； 無電鍍 ； 複合薄膜

並列摘要

A 35–300 nm amorphous ruthenium oxide and ruthenium composite film has been deposited by electroless plating on a Cu substrate. The plating solution contained compounds of K2RuCl5•xH2O, NaNO2, NaOH, and NaClO. Variables including different mixing steps, concentrations of NaNO2(aq), and plating time were investigated. The reaction steps for the electroless plating were indentified. Stability of the plating solution was confirmed by UV-Vis absorption spectra with narrow maximum wavelength distribution. EDX, SEM, AFM, XPS, and Raman spectroscopy were employed to characterize the as-deposited films. It was concluded that the plating solution with 0.06 M NaNO2(aq) delivered the desirable film qualities. A crystalline Ru film was obtained by H2 reduction for the as-deposited film at 200℃ for 2 hr. In addition, we were able to produce a crystalline RuO2 and Ru composite film by Ar annealing of the as-deposited film at 400℃ for 2 hr.

並列關鍵字

ruthenium oxide ； ruthenium ； electroless ； composite film

參考文獻

[1] Spendelow JS, Wieckowski A. Noble metal decoration of single crystal platinum surfaces to create well-defined bimetallic electrocatalysts. Physical Chemistry Chemical Physics. 2004;6(22):5094-118.

[2] Oh SH, Park CG, Park C. Thermal stability of RuO2/Ru bilayer thin film in oxygen atmosphere. Thin Solid Films. 2000;359(1):118-23.

[3] Josell D, Wheeler D, Witt C, Moffat TP. Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers. Electrochem Solid State Lett. 2003;6(10):C143-C5.

[4] Cho SK, Kim SK, Han H, Kim JJ, Oh SM. Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier. Journal of Vacuum Science & Technology B. 2004;22(6):2649-53.

[5] Kang SY, Hwang CS, Kim HJ. Improvements in growth behavior of CVD Ru films on film substrates for memory capacitor integration. Journal of the Electrochemical Society. 2005;152(1):C15-C9.