This dissertation studied a method for transferring of silicon thin layers from a first substrate onto a second substrate. Traditionally the first substrate implanted hydrogen and bonded with the second substrate. Using heat treatment to split the silicon thin layer by the formation which growth of hydrogen caused microcracks. In this process of substrates have a lot of thermal stress due to the substantially different coefficient of thermal expansion between these two substrates. To improve this process a new method using temperature lower than critical temperature and two kinds of wavelength light irradiate to split the thin layer by similar formation of hydrogen caused microcracks is be used. These two kinds of wavelength light’ frequency is located on infrared and ultraviolet range. By these two wavelength light irradiate hydrogen growth and overlapping in silicon will become easier. It is because ultraviolet light will let elections surround with silicon-hydrogen molecule excited and infrared light will let the vibration of silicon - hydrogen molecule stronger. As a result lower temperature at the silicon layer transfer is accomplished.