本文將就LED封裝作一介紹,同時針對GaN磊晶層轉移的技術就兩點作說明:(1)晶圓鍵合及雷射剝離的技術LLO完後GaN磊晶層之熱應力(thermal stress);(2)Wafer bonding及LLO製程溫度對於GaN-based磊晶層上各金屬層的影響。
In this paper, the LED packaging technologies will be overviewed. Besides, using the wafer bonding and LLO (Laser Lift-Off) to separate the GaN epi-layer will be discussed in the following two points: (1) Effect of thermal stress on LLO process (2) Effect of wafer bonding and LLO processes on the properties of metal contacts.