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高亮度照明GaN-based LED封裝趨勢與挑戰

Challenges for high-power LED Packaging

摘要


本文將就LED封裝作一介紹,同時針對GaN磊晶層轉移的技術就兩點作說明:(1)晶圓鍵合及雷射剝離的技術LLO完後GaN磊晶層之熱應力(thermal stress);(2)Wafer bonding及LLO製程溫度對於GaN-based磊晶層上各金屬層的影響。

關鍵字

LED封裝

並列摘要


In this paper, the LED packaging technologies will be overviewed. Besides, using the wafer bonding and LLO (Laser Lift-Off) to separate the GaN epi-layer will be discussed in the following two points: (1) Effect of thermal stress on LLO process (2) Effect of wafer bonding and LLO processes on the properties of metal contacts.

並列關鍵字

LED Packaging

被引用紀錄


黃國長(2009)。高亮度LED之熱模擬分析探討〔碩士論文,國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2009.00080

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