含錫之四族化合物半導體光電元件研究於發光二極體及光偵測器

當矽基電子元件隨著摩爾定律縮小至其元件之物理極限時，人們開始尋找並在矽基板上增加其他的功能，以實現一多功能整合之矽基光電積體電路。目前在世界上，已投入大量的研究經費在矽的開發上，進一步希望以矽基板為平台開發出光電元件與高速矽基電子元件整合之積體電路。由於矽為非直接能帶的半導體材料，所以當其製作成為光發射器時，其發光效率不高，因此目光匯聚到了另一個四族半導體材料:鍺，因為鍺的能帶特性，使得鍺成為了製作光電元件的最佳選擇；在本研究中有兩個研究主題:分別為以鍺錫合金為主動層之發光二極體及光偵測器；在第一個研究主題中，由理論上我們知道當錫加入鍺時，當錫的濃度到達特定量後，鍺錫合金會變成一直接能帶的半導體材料，因使我們使用分子束磊晶系統成長高錫濃度之鍺錫pin結構之樣品，並製作成發光二極體量測其電激發光光譜，希望朝四族直接能帶傳輸之半導體發光源邁進。而第二個研究主題為，以鍺錫合金製作光偵測器，並藉由實驗量測結果，探討鍺與鍺錫合金製作之光偵測器其元件特性，並進一步藉由實驗結果與理論分析鍺錫合金之光偵測器其物理特性。

關鍵字

鍺錫合金；發光二極體；光偵測器；光響應度；四族光電元件

並列摘要

As “Moore’s law” rapidly shrinks the feature size of Si electronic devices to their ultimate physical limits, there has been a concerted effort to broaden the functionalities of Si-based technology beyond electronics. Indeed, Si has been increasingly investigated as a platform for the monolithic integration of photonic devices with high-speed Si electronics [1]. The progress, however, has been hindered by the fact that Si as an indirect bandgap material cannot be used to make efficient light sources. Attention has been directed towards the other group-IV semiconductor, Ge, as a candidate for the monolithic light source. In this work, there are two topic which are light emitting diode and photodetector. First, work on Ge1-xSnx represents a step forward towards the goal of an efficient direct-bandgap GeSn light-emitting device on a Si substrate by incorporating higher Sn content of 7.8% in a diode structure that operates at lower current densities. Second, a Ge photodetector has a detection limit at 1550 nm, we add Sn to Ge in order to extend the detection range and then compare the difference and performance of Ge and Ge1-xSnx photodetector.

並列關鍵字

GeSn alloy ； light emitting diode ； photodetector ； responsivity ； group-IV optical device

參考文獻

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[1] Silicon-Based Optoelectronics, Richard A. Soref

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含錫之四族化合物半導體光電元件研究於發光二極體及光偵測器

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