應用於USB 3.1之資料率每秒一百億位元全速率時脈與資料回復電路設計

隨著科技半導體產業日益進步，資料傳輸速度越來越快速且資料量越來越龐大，則高性能之鎖相迴路及時脈與資料回復電路……等電路架構扮演之角色也日益重要，又系統時脈速度大幅提升而產生之時脈與資料傳輸誤差問題越顯重要。在此產業背景下，為解決此問題，高速率、低抖動之時脈與資料回復電路成為熱門研究議題。本論文研究主要是實現一個應用於USB 3.1之時脈與資料回復電路，為符合高速率之規格需求，本研究運用電壓電流轉換器(V-I Converter)取代電荷幫浦(Charge Pump, CP)，其速度影響主要來自於電流之充放電速率，因此我們應用電壓電流轉換器能有效減少電晶體(MOS)數量加快操作速率，但缺點是須在電流不匹配誤差(Current Mismatch)與充放電速率間取捨，然而幸運的是，電流不匹配誤差對時脈與資料回復電路之鎖定影響較小。並且為了縮小晶片面積，壓控振盪器(Voltage-Controlled Oscillator, VCO)我們在面積與相位雜訊(Phase Noise)間作取捨，由於本論文希望面積較小，因此使用環形振盪器(Ring Oscillator)做為晶片架構。由此設計我們不但可以操作在較高速率，亦能縮小晶片面積，達到高速率、低面積之時脈與資料回復電路。本論文使用 TSMC 65nm 1P9M CMOS 製程且供應電壓為1.2 V的環境下實現一個10Gbps全速率時脈與資料回復電路。輸入資料為10 Gbps PRBS7 ，還原時脈速率為10 GHz，功率消耗為30.1 mW，電路面積為72.5 μm x 47.5 μm 。

關鍵字

時脈與資料回復電路；二進位相位偵測器；全速率；鎖相迴路

並列摘要

With the advancement of technology, the speed of data transmission is getting faster and the amount of data is getting bigger. The role of high-performance phase-locked loop and clock and data recovery circuit architecture is also increasingly important. The problem of clock and data transmission errors caused by the greatly increased system clock speed becomes more important.Under this industry background, to solve this problem, high-speed and low-jitter clock and data recovery circuits have become popular research topics. The research in this paper is mainly to implement a clock and data recovery circuit applied to USB 3.1. In order to meet the requirements of high-speed specifications, this study uses a voltage - to - current converter to replace the charge pump. The speed effect mainly comes from the current charge-discharge rate, so we use a voltage-to-current converter can effectively reduce the number of transistors and speed up the operation rate, but the disadvantage is that there is a trade-off between the current mismatch and the charge-discharge rate. Fortunately, the current mismatch has little effect on the locking of clock and data recovery circuit. In order to reduce the chip area, the voltage controlled oscillator is a trade-off between the area phase noise. Due to the primary consideration of area in this paper, we use a ring oscillator to complete the chip architecture. From this design, we can not only operate at a higher rate, but also reduce the chip area to achieve a high-speed, low-area clock and data recovery circuit. The chip is fabricated by a 65 nm 1P9M CMOS process with a supply voltage of 1.2 V, and a 10 Gbps full rate clock and data recovery circuit is realized. The input data is 10 Gbps PRBS7 pattern, the restoration clock rate is 10 GHz, the power consumption is 30.1 mW, and the circuit area is 72.5 μm x 47.5 μm.