濺鍍機系統及製程改良與其應用於透明導電膜鍍銅之研究

Coating process improvement in a sputtering system and its applications in copper-coating on transparent conductive film.

蘇巍繽(Wei-Pin Su)

指導教授 ： 莊為群

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2015年)

摘要

本文研究係針對水平式濺渡實驗設備之設計缺陷以及沉膜產出效率瓶頸，並加以改造設備並製程條件再優化。其改良層面分為兩大部份探討，在原設備無RGA氣體分子監控下，利用透明導電膜軟基板烘烤退火後，置入真空腔體驗證PET膜及載具之水氣分子含量，水氣越多將越影響到抽氣效率和金屬濺渡沉積之阻抗及附著力，藉此改善影響因子。
機構面：增設一組真空腔體具備加熱器及渦輪分子幫浦之設計，目的為減少(ITO)透明導電膜軟基板在進入濺渡沉積腔體前，藉由腔體上方加熱器熱烘載具及基板並配合渦輪分子幫浦於中真空下有效再減少水氣分子，以達成最佳之抽氣速率。
製程面：在PET受熱容許範圍下（>160℃，表面溫度過高，濺渡成膜後Film易受冷熱應力翹曲），進而調整最佳參數條件，新腔體真空加熱作業時間為75sec，基板表面受熱溫度平均105℃，渦輪分子幫浦製程作業下真空壓力可到達<7.0E-2Pa。
最後將改造後之水平式濺渡實驗設備運用於電容式觸控面板薄膜製程，使用ITO透明導電膜基板來濺鍍銅(Cu)金屬薄膜並調配最佳化沉積速率及均勻性參數，輔以原子力顯微鏡(AFM)可用來推導出銅薄膜表面特性及其膜厚；掃描式電子顯微鏡(SEM)對銅薄膜表面微細結構觀察及分析；四點探針(低組抗率計)量測銅薄膜表面阻值。由實驗結果數據獲得最佳銅薄膜沉積速率為14mm/sec、銅阻抗<0.3Ω、高附著力，且薄膜產出效率提升49.6％。

關鍵字

真空腔體 ； 渦輪分子幫浦 ； 加熱器 ； 透明導電膜 ； 濺鍍銅

並列摘要

In this paper, splashed against a horizontal cross design flaws and bottlenecks after the film output efficiency of laboratory equipment, and to transform the device and re-optimization process conditions. Divided into two parts which improve the level of discussion in the original equipment without RGA gas molecules under the supervision of, a transparent conductive film flexible substrate annealing after aging, the more water vapor molecules into the vacuum chamber to experience content license of the PET film carrier will affecting the pumping efficiency and deposition of transition metal splash resistance and adhesion, thereby improving impact factor.
Institutions side: establishing an additional vacuum chamber with a heater and a turbo-molecular pump in the design, aimed at reducing (ITO) transparent conductive film substrate before entering soft splash crossing deposition chamber, with the top of the heater cavity hot baking load and substrate and with a turbo-molecular pump in a further reduction in the effective water under vacuum gas molecules in order to achieve the best of the pumping rate.
Process side: In PET heat allowable range (> 160 ℃, the surface temperature is too high, after crossing the film Film vulnerable splash cold stress warping), and then adjust the optimum parameters, the new chamber vacuum heating operation time was 75sec, The average surface temperature of the substrate is heated 105 ℃, turbo-molecular pump routing operation under vacuum pressure can reach <7.0E-2Pa.
Finally, after the transformation of the horizontal crossing splash laboratory equipment used in the capacitive touch panel membrane processes, the use of ITO transparent conductive film substrate to splash copper (Cu) deposition rate and uniformity of the metal film, supplemented by: atomic force microscopy (AFM) can be used to derive the characteristics and thickness of the copper film surface; a scanning electron microscope (SEM) of the surface microstructure observation and analysis of the copper film; four-point probe (lower panel of anti-meter) measured copper film surface resistance . The results obtained from the best data for copper deposition rate 14mm / sec, copper impedance <0.3Ω, high adhesion, and film output efficiency 49.6%.

並列關鍵字

Vacuum chamber ； Turo pump ； Heaters ； ITO Film ； Sputter Cu

參考文獻

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