Title

射頻磁控濺鍍氮化鋅及氧化鋅薄膜研究

Authors

許景河

Key Words

氮化鋅 ; 氧化鋅 ; p型 ; 共摻雜 ; Zn3N2 ; ZnO ; p-type ; codoping

PublicationName

清華大學材料科學工程學系學位論文

Volume or Term/Year and Month of Publication

2010年

Academic Degree Category

碩士

Advisor

吳振名

Content Language

繁體中文

Chinese Abstract

本實驗以射頻磁控濺鍍法於玻璃基板上鍍製Zn3N2以及共摻雜之ZnO:(Ga、N)薄膜,研究濺鍍參數以及退火處理對其結構和性質之影響。 在實驗的第一部份,調整不同濺鍍參數,嘗試於玻璃基板上製備Zn3N2,後續則改變不同退火條件,了解熱處理對Zn3N2氧化行為的影響。研究結果顯示,製備Zn3N2較適當之濺鍍功率為25W,且所鍍製出之Zn3N2有強烈的(400)優選方向。Zn3N2薄膜在經過後續的退火處理後,約在450℃會開始氧化,且氧化溫度是影響氧化行為的最主要參數,若溫度提高,氧化速率會加快。此外,薄膜厚度及退火時間也會影響氧化後ZnO之性質。 第二部份則利用共摻雜方式製備ZnO:(Ga、N),實驗中採用固定功率,改變不同N2/Ar比例以及基板溫度,探討其對於薄膜結構和光學及電學性質的影響。研究結果顯示,提高基板溫度有助於電阻率的降低,而工作氣體中N2比例的提高,電阻率會有上升的趨勢。此外,退火處理對ZnO:(Ga、N)薄膜的電阻率也會有顯著影響,在500℃退火後,電阻率明顯上升,推測這是由於退火處理使得ZnO薄膜的本質缺陷降低所致。研究結果也發現,於氧氣氛中退火較有利於本實驗鍍製之ZnO:(Ga、N)薄膜產生p-type電性。

Topic Category 工學院 > 材料科學工程學系
工程學 > 工程學總論
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