stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  K. Kim and G. H. Koh, "Future memory technology including emerging new memories," in International Microelectronics Conference, pp. 377-384 vol.1, 2004.
-  S. YunSeung, “Non-volatile memory technologies for beyond 2010,” in IEEE Symp.VLSI Technology Dig. Tech. Papers, pp. 156-159, 2005.
-  R. Takemura, T. Kawahara, K. Miura, H. Yamamoto, J. Hayakawa, N. Matsuzaki, K. Ono, M. Yamanouchi, K. Ito, H. Takahashi, S. Ikeda, H. Hasegawa, H. Matsuoka, and H. Ohno, “A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and ‘1’ / ‘0’ Dual-Array Equalized Reference Scheme,” IEEE J. Solid-State Circuits, vol. 45, pp. 869-879, Apr. 2010.
-  M. Gill, T. Lowrey, and J. Park, "Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications," in IEEE International Solid-State Circuits Conference Dig. Tech. Papers, pp. 202-459 vol.1, 2002.
-  S. Kang, W. Y. Cho, B. H. Cho, K. J. Lee, C. S. Lee, H. R. Oh, B. G. Choi, Q. Wang, H. J. Kim, M. H. Park, Y. H. Ro, S. Kim, C. D. Ha, K. S. Kim, Y. R. Kim, D. E. Kim, C. K. Kwak, H. G. Byun, G. Jeong, H. Jeong, K. Kim, and Y. Shin, "A 0.1μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-Read operation," IEEE J. Solid-State Circuits, vol. 42, pp. 210-218, 2007.
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