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  • 學位論文

科技廠電壓驟降問題改善案例探討

A Case Study of Voltage Sag Problem Improvement for The High-Tech Factory

指導教授 : 陳士麟
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摘要


本探討運轉十八年的8英吋晶圓半導體工廠(A廠)的電壓驟降問題。該廠於2011-14年間,電壓驟降造成產能損失,平均每次損失金額達新台幣2500萬元。A廠設立於一般工業與住商的混合地區,並非半導體製造工廠的專屬工業區,遂對於A廠的供電系統潛藏危害。此外,A廠於建廠時為了降低建置成本,大量採購國外二手設備,因此造成設備額定電壓的多樣性;然而,廠內供電系統的設置,並未考慮設備電壓的差異性。因此A廠採取幅度在10%內的電壓系統供應設備使用,例如:3Ø3W220V與3Ø3W200V之設備額定電壓,皆由3Ø4W208V/120V系統電壓供應,電壓驟降遂易造成設備當機。 國際半導體材料設備協會已制定國際間半導體設備製造商通用的標準規範即SEMI F47,該規範為半導體設備對於供電系統電壓驟降應變能力之規範,是半導體設備製造廠商必須遵守的準則。 半導體工廠常設置多項電壓驟降防範設備,例如:不斷電系統、靜態轉供開關、動態電壓補償器等,防範電壓驟降的危害,並提升工廠內部電力品質。 本文分析A廠的製程設備與廠務系統之間的關聯性、發生電壓驟降時採取的緊急應變措施,並統計2011 -14年間發生在A廠所在地區影響A廠的電壓驟降次數、降幅及時間。據之提出低成本高效率的改善方法,包括使用不斷電系統與穩壓器等設備,優先改善長晶設備、製程冷卻水系統及空壓機的電控系統,達到防止電壓驟降的危害。台電供電饋線及A廠設備改善後,經統計2013-14年期間台電共發生7次電壓驟降,僅3次影響A廠,已大幅改善電壓驟降的危害。 最後,對於A廠尚未改善部分,本文亦提出短、中、長期的建議。 關鍵字:電壓驟降、解決方法、半導體工業

並列摘要


The voltage sag issue in an 8〞- semiconductor factory (Factory A) operated for eighteen years are discussed in this report . The factory at each time of voltage sag is about 2500 NT$ during 2011-14. Factory A is located in the mixed residential and commercial area;this district is not for the semiconductor factory’s exclusive use. Thus, it has risk on the reliability of power supply .While building the factory, the factory owner purchased lot of second-hand equipments, which results in the diversity of devices’ rated voltage , having not considered the rated voltage differential among equipments or devices , while set up the power supply system. That is, the factory adopted the power supply voltage within 10% tolerance on the facility rating. For example:most devices with rating at 3Ø3W 220V and 3Ø3W 200V are both supplied by the same power system at 3Ø4W 208V/120V, which thus worsens the voltage sag problem. The Semiconductor Equipment Materials and International (SEMI) has established the common standards for the word- wide semiconductor equipment manufacturers, termed as the SEMI F47.This standard is for the resilience of the system power supply voltage sag, which the equipment has to be complied with. Semiconductor factories regularly install various kinds of sag prevention devices , such as: Uninterruptible Power Supply, Static Transfer Switch, Dynamic Voltage Restorer, etc. .These are used for preventing from the risk of voltage sag and for improving the power supply quality. This technical report analyzes the relationship between the manufacturing process and utility services systems , and presents the reaction measure of voltage sag in Factory A, and makes statistic calculation on the past voltage sag data, including the frequency of occurrence, sag amplitude and sag duration during 2011 -14. Based on the analysis Uninterruptible Power Supply , Automatic Voltage Regulator, etc.. have been suggested and installed. Also the Single –Crystal Silicon Growing System, Process Cooling Water and Electrical Control System for Air compressor have been select as among the top priority for improvement on the risk prevention due to voltage sag. The improvement conducted in Factory A has reduced the lost of production of Factory A to only three time per year during 2013-14 under the occurrence of voltage sag on the Taipower feeder for even total seven times- a year, The lost cost is thus significantly reduced. Some improvements categoried into short , medium and long-term, for future improvement in factory A are also presented in this technical report. Keywords: Voltage Sag, Counter Measures, Semiconductor Industry

參考文獻


[1] P. T. Cheng, C. C. Huang, C. C. Pan, and Subhashish Bhattacharya,Bhattacharya, “Design and plementation of a Series Voltage Sag Compensator Under Practical Utility Conditions,” IEEE Transactions on Industry Applications, Vol. 39, No.3, May/June 2003, pp.884-853.
[3] SEMI F47(Implemented in 1999), Specification for Semiconductor Processing Equipment Voltage Sag Immunity.
[8] IEEE Balanced and Unbalanced Three-Phase Voltage Sag Generator for Testing Electrical Equipment ,2014.
[9] M. Didden, E. D. Jaeger, W. Haeseleer, and R. Belmans , “ How to Connect a Voltage Sag-Measuring Device: Phase to Phase or Phase to Neutral ? ,” IEEE Trans . Power Del . ,Vol. 20, pp. 1174-1181, Apr. 2005.
[11] SEMI F47-0200 , Specification for Semiconductor Processing Equipment Voltage Sag Immunity , 1999.

被引用紀錄


江宜珊(2005)。電視新聞主播播報風格對觀眾接收新聞內容之影響〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2005.00123

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