以沾筆式奈米微影術及無電鍍沉積法製備奈米銀結構

The synthesis of silver nanostructures by Dip-pen Nanolithography and electroless deposition

李學緯(Xie-Wei Li)

指導教授 ： 張裕煦

國立臺北科技大學/工程學院/資源工程研究所/碩士(2011年)

https://doi.org/10.6841/NTUT.2011.00646

摘要

本實驗使用沾筆式奈米微影技術、無電鍍以及賈凡尼置換反應製備銀奈米結構。首先以沾筆式奈米微影術技術製備分子圖形陣列，利用無電鍍銅的方式在分子圖形上沉積出銅金屬奈米陣列，而銀原子的還原電位高於銅原子的還原電位，因此將所製備的銅金屬奈米陣列置入含有銀離子的溶液中並控制反應條件進行賈凡尼置換反應，使分子圖形上的銅金屬置換成銀金屬奈米陣列。
本研究首先利用 4-Mercaptobenzoic acid 吸附於銀奈米顆粒陣列表面，再藉以顯微拉曼光譜儀量測銀奈米顆粒的表面增強拉曼散射現象，量測數值約3萬左右，相較於單層金(增強因子約900)之增強幅度相差30倍以上。並且在最初利用沾筆式奈米微影術製備分子點陣時先控制分子點陣的尺寸，再於無電鍍銅時控制銅奈米顆粒的尺寸，最後於置換成銀奈米顆粒時以達到控制陣列尺寸。

關鍵字

自組裝單分子層 ； 沾筆式奈米微影術 ； 奈米金屬陣列 ； 表面增強拉曼散射

並列摘要

In this research, sliver nanostructures are prepared by Dip-pen Nanolithography, electroless deposition and Galvanic displacement reaction. Dip-pen Nanolithography is employed to prepare the molecular patterns followed by the electroless deposition of Cu. After the growth of Cu nanostructures, the substrate is then reacted with AgNO3(aq) to undergo a galvanic displacement since the reduction potential of silver (Eo = 0.7996V) is higher than the reduction potential of copper (Eo = 0.34V). In this reaction, copper nanostructures are all replaced by silver on molecular patterns.
The physical properties of these silver nanostructures are studied including surface-enhanced Raman scattering (SERS) and electrical conductivity. 4-Mercaptobenzoic acid molecules as the probe are adsorbed on the surface of silver nanostructure array for SERS measurement. The SERS intensity of Ag nanostructures is about 300,000 which is more than 30 times than that of the gold thin film. During the experimental process, the dimension of molecular patterns is driven by DPN and the size of copper is controlled by the deposition environment. Subsequently, the dimension of silver is also effected by Galvanic displacement reaction.

並列關鍵字

self-assembled monolayers ； Dip-pen Nanolithography ； metal nanostructures ； surface-enhanced Raman scattering

參考文獻

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