即時電阻量測系統應用於原子層沉積白金薄膜成長分析

In-situ Resistance Measurement for Analysis of Platinum Thin Film Nucleation during Atomic Layer Deposition

卓文浩(W. H. Cho) ； 柯志忠(C. C. Kei) ； 林建寶(C. P. Lin) ； 劉柏亨(B. H. Liu) ； 余友軒(Y. S. Yu) ； 郭倩丞(C. C. Kuo) ； 陳峰志(F. Z. Chen)

《真空科技》 29卷1期 (2016/03) Pp. 27-31

摘要

本實驗以前驅物(MeCpPtMe3)及還原劑(氧氣)，利用原子層沉積技術沉積白金薄膜，基板溫度為300oC，並以四線式電阻量測系統即時量測白金薄膜成長過程電阻變化，前80個ALD cycle電阻維持1×10^7歐姆以上，無明顯變化，在80個cycle後電阻開始急遽降低，20個cycle數內電阻由1×10^7以上降至400歐姆，此為各島狀白金之間距離越來越近甚至開始有接觸之現象，由掃描式電子顯微鏡之觀察發現，80個cycle後島狀白金顆粒其直徑約為20–30nm，顆粒間仍有縫隙，當成長至120個cycle後始成為連續膜而薄膜電阻亦降至27歐姆。

關鍵字

原子層沉積 ； 白金薄膜 ； 即時電阻量測

並列摘要

In this study, the Pt thin fi lms were deposited on the quartz substrate at 300oC by Atomic layer deposition ALD using MeCpPtMe_3 and oxygen as precursors. The in-situ resistance of Pt fi lm during the ALD reaction was measured by four-point probe resistance measurement. When the ALD cycle number exceeded 80, the resistance dropped rapidly from 1×10^7 ohm to nearly 400 ohm, indicating that the resistance gets smaller by a factor of 1×10^5 within 20 cycles of ALD. The morphology of Pt observed by SEM show that the Pt islands with a diameter of 20-30 nm were grown after 80 cycles of ALD. As cycle number increased to 120, the isolated Pt islands were then clustered to form a continuous fi lm and the resistance of Pt fi lm dropped to 27 ohm.

並列關鍵字

Atomic layer deposition ； Platinum thin fi lm ； In-situ resistance measurement