透過您的圖書館登入
IP:3.149.250.1
  • 期刊

濺鍍鐵熱氣相法生成之奈米碳管熱壓合轉印形成場發射金屬球陣列技術

Field-Emission Metal-Ball Grid-Array Technology via Pressured Hot-Bonding with a Carbon Nanotube Grown from Sputtered Iron by a Thermal Vapor Method

摘要


奈米碳管是目前場發射顯示器主要的場發射子材料,但目前的技術不易利用化學氣相沉積方法(chemical vapor deposition, CVD)成長奈米碳管於超過50英寸之大面積金屬導線上,同時還達到可用的均勻性。本研究提出以濺鍍之奈米鐵粒子做爲催化劑,然後於管狀爐中以化學氣相沉積法生成具高度方向性的奈米碳管,再經由BGA錫球加熱至熔點(185°C)後,透過熱壓合轉印法的方式將奈米碳管附著於金屬基板上,形成奈米碳管球陣列的電子場發射源。轉印後的奈米碳管球陣列對奈米碳管的吸附力強,可減少奈米碳管因長期使用被電場拉至陽極現象。錫球成本極低,可靠度高、與IC封裝材料及封裝程序相容的性質,使其非常適合作爲奈米碳管與金屬基板的媒介。藉由熱壓合轉印法的方式所形成的奈米碳管陣列經由場發射量測顯示具有優秀的附著性及場發射特性,實驗結果顯示奈米碳管分布於錫球表面其樣品於電流密度(1μA/平方公分)時具有極低的起始電場,達到1.025V/μm,大面積的金屬場發射基板,可經由區域之重覆加工實現,自動化生產也變可能。

並列摘要


A carbon nanotube is the primary source for field emission in many applications today, especially for display. However, it is difficult to grow a carbon nanotube by the CVD (chemical vapor deposition) method on metal wire in an area larger than 50 inches with any usable uniformity. In this research a method is developed whereby a carbon nanotube is grown in a high-temperature tube oven with sputtered Fe as a catalyst, then transferred onto a positioned Ball Grad Array by pressured hot-bonding at 185°C between the nanotube and the ball, thus forming a field-emission ball-grid array. The transferred carbon nanotube demonstrates a strong attachment to the Sn ball, thereby preventing detachment from the cathode after the application of long period of extreme fielding. The extremely low cost, high reliability and compatible IC packaging property of the Sn ball makes it a suitable medium for attachment between a carbon nanotube and metal. The formed array exhibits excellent emission when turning on a field of 1.025 V/µm at 1μA/cm^2 current density. A large-area field emission cathode can be achieved through repeated small-area applications of this process, which also enables automatic production.

延伸閱讀