新型罩幕式唯讀記憶元件之研究

The Study of the Novel Mask ROM Device

龔威菖(W-C Kung)

指導教授 ： 鄭湘原

中原大學/工學院/電子工程研究所/碩士(2004年)

https://doi.org/10.6840/cycu200400779

摘要

非揮發性記憶體元件近年來在半導體記憶元件上扮演著越來越重要的角色。隨著可攜帶式電子商品的普及化，例如:筆記型電腦、可攜式電子產品...等，非揮發性記憶元件在製程技術、操作機制和電路佈局都有著快速的進步。在本研究中，首先在非揮發性記憶體與揮發性記憶體差異上做說明並針對幾個典型的非揮發性記憶體做簡介；從最早期的唯讀記憶體(Read Only Memory, ROM)、可程式化唯讀憶體(Programmed Read Only Memory, PROM)，到可抹除程式化唯讀記憶體(Erasable Programmed Read Only Memory, EPROM)、電性可抹除程式化唯讀記憶體(Electrically Erasable Programmed Read Only Memory, EEPROM)，至目前最熱門的快閃記憶體(Flash Memory)。大體而言，較低密度產品以EEPROM居多，而高密度者以罩幕式唯讀記憶體與快閃記憶體較看好。其中低成本、高密度的非揮性記憶體仍以罩幕式唯讀記憶體為主軸。
本論文是利用以標準CMOS製程製作新型罩幕式唯讀記憶元件為主，於實驗上首先就此新型罩幕式唯讀記憶元件的編碼原理與讀取方式做說明，並利用TSUPREM4 及MEDICI 分別去模擬罩幕式記億元件的結構及基本電性，最後在實驗方面，將進行陣列設計評估並予以量測。從記憶元件陣列量測數據中發現此新型罩幕式記憶元件具有良好的多位元記憶體特性，且具有相當容易的判讀電性。但是在“0”的狀態中存有不穩定的電性，但仍然不影響其位元的判讀。在論文的最後，將提出解決的方案得以使此新型罩幕式記憶體更加穩定，並期以日後能進行更進一步的改善與實現。

關鍵字

新型罩幕式唯讀記憶元件 ； 非揮發性記憶體

並列摘要

Non-Volatile Memory (NVM) has been developed and improved in past years. Recently it has been received much attention in mobile and portable applications, such as mobile phones, smart cards and digital camera. First, the history of the Non-Volatile Memory (NVM) and the concepts of the NVM are introduced. And the examples of NVMs, such as EPROM, EEPROM, flash memory are also introduced. However, among various memory types, Mask-programmable read-only-memories (MROMs) are one of the cheapest memories. MROMs are widely used as memory devices and capable of storing permanently information. This thesis presents a novel Mask ROMs device using an existing logic CMOS processing. The TSUPREM4 and MEDICI are used to simulate the device process and electrical characteristics. The read performance is compared during simulation and measurement. Finally, the measured results of the novel Mask ROMs array will be studied in order to understand the memory array characteristics for practical applications.

並列關鍵字

MASK ROM ； Non-Volatile Memory

參考文獻

[2-5] 洪志學, “The Study of The Novel Non-Volatile Memory Device”, 中原大學碩士論文, 2003

[1-11] F. Masuoka, S. Ariizumi, T. Iwase, M. Ono, and N. Endo, “An 80ns 1Mbit Mask ROM with a New Memory Cell”, IEEE Journal of Solid-State Circuits, Vol. SC-19, No. 5, October 1984.

[1-1] Samsung Electronics Co. LTD ,“Flash Technology”, , pp.4, 2002

[1-3] “Flash Technology”, Samsung Electronics Co. LTD, pp.4, 2002

[1-6] E. Bertangolli et al, “ROS: An Extremely High Density Mask ROM Technology Based on Vertical Transistors Cells”, Symp. VLSI Tech Dig., p.58, 1996.