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Effect of Different Substrates on the Properties of Ga2O3-Doped ZnO Thin Films and Their Applications in p-i-n α-Si:H Thin-Film Solar Cells

並列摘要


A compound of ZnO with 3 wt% Ga_2O_3 (ZnO:Ga_2O_3 = 97:3 in wt%, GZO) was sintered at 1,400°C as a target. The GZO thin films were deposited on glass, polyimide (PI), and SiN_x/PI substrates using a radio frequency magnetron sputtering system at a deposition temperature of 100°C as the transparent conduction oxide (TCO) thin films. Silicon nitride (SiN_x) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD). The effects of different substrates (PI, glass, SiN_x/PI) on the surface morphology, crystallization size, lattice constant (c), resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. As PI and glass were used as substrates, the surface morphologies had no apparent change; As SiN_x/PI was used as substrate, the surface morphology showed different result. The variations in the optical band gap (Eg value) of the GZO thin films on different substrates were evaluated from the plots of (ahv) = c(hν-E_g)^(1/2). The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells on different substrates, and their properties were also measured.

被引用紀錄


馬威宇(2006)。皺紋型矽鍺薄膜之電洞傳輸行為〔碩士論文,國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2006.00162
林展慶(2006)。旋塗式奈米碳管場效電晶體製作與其電特性量測〔碩士論文,國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-1303200709270096

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