熱退火及電漿處理對氧化鋅薄膜物理特性之影響

本研究利用溶膠凝膠法製備ZnO、AZO (Al-doped ZnO)及NAZO(N-Al co-doped ZnO)前驅溶液，以spin-coating後熱退火的方式在石英基板上成膜。薄膜的表面形貌以原子力顯微鏡(AFM)掃描，薄膜的晶格結構以X光繞射儀分析之，薄膜的能隙及缺陷發光以光致螢光光譜測量，以霍爾效應儀器分析薄膜的電性。以AFM掃瞄出的表面形貌結果顯示退火溫度會對表面形貌造成明顯的影響，不過無法從中得知退火溫度對於表面形貌之關係。X光繞射分析中，ZnO及AZO均會隨著退火溫度升高有強度更強的繞射峰，NAZO薄膜因為參雜物較多的關係，沒有明顯的繞射峰，可反映NAZO薄膜為非晶態。光致螢光光譜中可以證明，鋁原子及氮原子對氧化鋅薄膜會顯著影響其發光效應，並可觀察到薄膜的缺陷發光。霍爾效應方面，只做熱退火處理的薄膜，其電性表現都不甚理想，可由PL光譜得知缺陷無法改善薄膜的電性，因此再藉由氫氣電漿處理之後，ZnO、AZO及NAZO薄膜的電阻率、載子濃度以及載子遷移率都得到了大幅度的改善。

關鍵字

氧化鋅薄膜；熱退火；電漿處理；光致發光；霍爾效應

並列摘要

In this study, ZnO, AZO (Al-doped ZnO) and NAZO (N-Al co-doped ZnO) precursor solutions were prepared by the sol-gel method. Then the solutions were spin-coated on quartz substrates to form thin films. The surface morphology and crystalline structure of the thin films were obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD). The photoluminescence spectroscopy reveals the energy bandgap and defects of the thin films. The resistivity, carrier concentration and mobility of the thin films were measured by Hall effect measurement. The results show that the surface morphology of the film is not directly related to the annealing temperature. In X-ray diffraction, the intensity of the diffraction peaks of the ZnO and AZO thin films increases as the annealing temperature increases, but the NAZO thin films do not show any relationship between the annealing temperature and the diffraction peaks. We used photoluminescence spectroscopy to find that the luminescence of the ZnO thin films was highly influenced by nitrogen and aluminum doping. The electrical properties of all the films with only thermal annealing had poor performance. Because hydrogen plays the role of the shallow donor in ZnO, we got better electrical performance of the samples after using hydrogen plasma treatment.

並列關鍵字

ZnO thin films ； annealing ； plasma treatment ； PL ； Hall effect

參考文獻

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熱退火及電漿處理對氧化鋅薄膜物理特性之影響

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