射頻磁控濺鍍氧化銅和氧化鈷摻雜氧化鋅薄膜之性質研究

Properties of CuO and CoO doped ZnO films prepared by radio-frequency magnetron sputtering

張厚德(Hou-Te Chang)

指導教授 ： 陳國駒

共同指導教授 ： 王惠森(Huei-Sen Wang)

義守大學/理工學院/材料科學與工程學系/博士(2016年)

摘要

本實驗是使用射頻磁控濺鍍方法，在無鹼矽酸硼玻璃（康寧玻璃7059）基板上，製作氧化鋅薄膜，有配用直流電漿來增加氮氣解離。分別探討在不同量氧化銅(CuO)及氧化鈷(CoO)摻雜下，對氧化鋅薄膜微結構及特性影響。
研究結果如下:
(1) 所有氧化鋅薄膜沿晶體擇優面(002)成長，(103)面繞射強度在4 at%氧化銅是較低，從2 到 4 at% 氧化銅摻雜濃度，則繞射強度隨增加氧化銅濃度而減少，而從4 到 10 at%氧化銅摻雜濃度，則繞射強度隨增加氧化銅濃度而增加。在能見光波長(400-700nm)內，穿透率和能隙隨增加氧化銅濃度而減少。電阻率則隨增加氧化銅濃度而增加，是因增加氧空隙(Vo)濃度和晶界密度增加。
(2) 所有氧化鋅薄膜沿晶體擇優面由(002)轉至(103)面成長，從6 到 15 at% 氧化鈷摻雜濃度，則(103)面繞射強度在6 at%氧化鈷是較高，隨氧化鈷濃度增加而減少。(002)面繞射強度在6 at%氧化鈷是較低，隨氧化鈷濃度增加而增加。 在能見光波長(400-700nm)內，穿透率和能隙隨增加氧化鈷濃度而減少。電阻率則隨增加氧化鈷濃度而增加，是因晶界密度增加。

關鍵字

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並列摘要

In these studies, zinc oxide thin films were prepared through magnetron sputtering on alkali-free borosilicate glass substrates, with a direct current plasma system adopted to increase the degree of dissociation of N2 gas. There were two items in these studies to discuss the influences for microstructures and properties of ZnO films, which included that (1) various doping content of CuO, (2) various doping content of CoO were applied during the preparation process to investigate its influence on the properties of ZnO films.
Microstructures and properties of ZnO films were observed the influences depicted as below.
(1) All of CuO doped ZnO thin films grew along the preferential (002) crystal plane, with the diffraction intensity of (103) plane being lower at 4 at%, decreasing upon increasing the CuO concentration from 2 to 4 at% and increasing upon increasing the CuO concentration from 4 to 10 at%. The transmittance, as well as the optical band gap, in the wavelength range of visible light (400-700 nm) decreased upon increasing CuO concentration. The resistivity increased upon increasing CuO concentration, duo to the increasing Vo concentration and the increasing density of grain boundaries.
(2) All of CoO doped ZnO thin films grew along the preferential crystal plane from (002) transferring to (103), increasing the CoO concentration from 6 to 15 at%, with the diffraction intensity of (103) plane being higher at 6 at%, decreasing upon increasing the CoO concentration, and with the diffraction intensity of (002) plane being lower at 6 at%, increasing upon increasing the CoO concentration. The transmittance, as well as the optical band gap, in the wavelength range of visible light (400-700 nm) decreased upon
increasing CoO concentration. The resistivity increased upon increasing CoO concentration, duo to the increasing density of grain boundaries.

並列關鍵字

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參考文獻

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