半導體多片晶圓微波退火技術開發

半導體晶圓微波退火最大特色就是可較低溫完成退火目的，這低熱預算（thermal budge）的退火製程對半導體製造是一大優勢。半導體在前段、後段或封裝製造製程裡，對摻質活化、缺陷修補或高分子固化等需作加熱退火改質。然而半導體製程隨著摩爾定律的演進，為避免摻質擴散或對材料結構的破壞，退火可容許的溫度較過去越來越低。半導體材料的成分鍵結可對微波能量直接吸收，進而產生振動或轉動達到低溫的退火目的。微波波長長穿透性高，很適合進行多片晶圓同時退火處理的開發，以達到提升產能的功效。

關鍵字

微波；退火；半導體

並列摘要

The most important feature of microwave annealing for semiconductor wafers is that they can complete annealing at lower temperature. This low thermal budge annealing process is a great advantage for semiconductor manufacturing. Semiconductors are manufactured in front-end, back-end, or packaging processes, and their dopant activation, defect repair, or polymer curing require thermal annealing for anality modification. However, with the evolution of Moore's Law, in order to avoid dopant diffusion or damaging material structure, the allowable temperature for annealing is getting lower and lower than in the past. The component bonding of the semiconductor material can directly absorb microwave energy, thereby generating vibration or rotation to achieve low-temperature annealing. The long wavelength of microwave has high permeability, which is very suitable for the development of simultaneous annealing of multiple wafers to achieve the effect of increasing productivity.