CMOS-MEMS磁通閘磁力計之驅動電路與晶片設計

Designs of Driving Circuit and Chip Layout for the CMOS-MEMS Fluxgate Magnetometer

李承勳(Cheng-Shiun Lee)

指導教授 ： 呂志誠 ； 鄭振宗

國立臺北科技大學/機電學院/機電整合研究所/碩士(2008年)

摘要

本研究使用纏繞線圈於磁透合金上方式製作雙磁蕊式磁通閘感測元件，研究磁通閘感測元件之原理及軟磁材料之磁性特性，探討激發電流頻率與振幅變化對感測器軟磁蕊之磁滯曲線與及感測器輸出電壓的影響，並設計回授驅動電路，提高磁通閘磁量計量測磁場的線性度和靈敏度，且量測磁量計之雜訊和磁場-頻率變化輸出響應並探討其雜訊問題，並利用磁通閘磁量計做地磁的量測，以驗證其對於量測直流磁場之可行性。
此外將利用CMOS-MEMS製程設計微小化之磁通閘磁量計，之後整合磁控濺鍍磁性薄膜後製程，並設計最佳參數，以提供符合元件所需之磁性薄膜，其結果提將有助於開發高線性晶片式之磁通閘感測元件，對於未來各種應用具有重要的價值。

關鍵字

磁通閘磁量計 ； CMOS-MEMS感測器

並列摘要

In this paper we design a double-rod fluxgate magnetometer, and study the principle of the fluxgate magnetometer and the magnetic characteristics of soft magnetic material. We also design a feedback driving circuit, which can enlarge the detectable range and improve the linearity of the device. To disuse the noise problem of the device, we measure the noise of the fluxgate magnetometer. Furthermore, we measure the geomagnetic field by using our device to demonstrate its capability in sensing the dc magnetic fields. Besides, we design the miniature fluxgate magnetometer and manufacture by use of CMOS-MEMS process. For integration with the post-process, we also investigate the deposition condition for the magnetic thin film with the magnetron sputtering to optimize the parameter of the planar fluxgate device. Our results are valuable in developing the small single-chip fluxgate magnetometer with high linearity, which is important for many practical applications.

並列關鍵字

fluxgate magnetometer ； CMOS-MEMS sensor

參考文獻

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