超寬頻無線接收機之射頻CMOS前端電路設計

Design of RF CMOS Front-End for Ultra-Wideband Wireless Receiver

黃哲揚(Zhe-Yang Huang)

指導教授 ： 陳淳杰 ； 涂世雄

中原大學/工學院/電機工程研究所/碩士(2006年)

https://doi.org/10.6840/CYCU.2006.00398

摘要

隨著無線通訊系統的發展，為因應影音及大量資料之無線傳輸，超寬頻無線通訊系統可達480Mb/s以上之超高速無線傳輸，並為近年來重要的發展領域。歸功於CMOS半導體技術的進展，射頻CMOS電路已提供系統晶片(SoC)整合之可行性。

本論文主要探討CMOS之射頻前端電路設計，其中共有七種低雜訊放大器(Low-Noise Amplifier)之設計，(1) UWB LNA with Multi-Stage LC-Tank (2) UWB LNA with Two-Stage Shunt Peaking (3) UWB LNA with Inductor-Coupling Resonated Loading (4) UWB LNA with Capacitor-Coupling Resonated Loading (5) UWB LNA with Inductor Loading (6) UWB LNA with RLC-Impedance Feedback (7) UWB LNA with Notch Filter，工作頻段設計於在3.1GHz-5.0GHz、6.0GHz-10.6GHz與3.1GHz-10.6GHz，可同時應用於直接序列超寬頻(DS-UWB)規格與多頻帶頻率正交多工(MB-OFDM)規格，本論文之寬頻低雜訊放大器使用多種設計方式，其中有多級放大器、迴授式放大器、電容耦合式放大器、電感耦合式放大器並以TSMC 0.18um與UMC 0.18um製成為主。應用於多頻帶頻率正交多工之射頻前端電路搭配一混頻器(Mixer)，作為降低頻率之重要電路。

關鍵字

超寬頻 ； 低雜訊放大器 ； CMOS 前端電路 ； 直接序列超寬頻 ； 混頻器 ； 射頻積體電路 ； 多頻帶正交多工 ； 超寬頻系統 ； 迴授放大器 ； 電感耦合式電路 ； 電容耦合式電路 ； 射頻CMOS ； 多級放大器

並列摘要

According to the development of wireless communication system, high data rate wireless transmission for video datum and audio datum is becoming significant. Ultra-wideband wireless communication system provides more than 480 Mb/s ultra high speed wireless communications and also is an important research area in academia and industry. Attributing to the progress of the CMOS semiconductor technology, RF-CMOS designs are providing a feasible solution for system on a chip (SoC).

The thesis mainly discussed with RF CMOS Front-End design including seven kinds of low-noise amplifiers. According to the priority, (1) UWB LNA with Multi-Stage LC-Tank (2) UWB LNA with Two-Stage Shunt Peaking (3) UWB LNA with Inductor-Coupling Resonated Loading (4) UWB LNA with Capacitor-Coupling Resonated Loading (5) UWB LNA with Inductor Loading (6) UWB LNA with RLC-Impedance Feedback (7) UWB LNA with Notch Filter The working frequency is design in 3.1GHz-5.0GHz, 6.0GHz-10.6GHz and 3.1GHz-10.6GHz. The designs are appropriate to the specification of DS-UWB and MB-OFDM. The low-noise amplifiers are using several types of designs containing multi-stage amplifier, feedback amplifier, capacitor-coupled amplifier, inductor-coupled amplifier which are implemented in TSMC 0.18um process and UMC 0.18um process. The front-end of MB-OFDM is collocated with a Mixer to decrease the frequency.

並列關鍵字

CMOS Front-End ； DS-UWB ； LNA ； Capacitor-Coupled ； Feedback Amplifier ； Multi-Stage Amplifier ； RFIC ； UWB ； MB-OFDM ； Low-Noise Amplifier ； RF-CMOS ； Mixer ； Inductor-Coupled ； Ultra-Wideband

參考文獻

[20] Chun-Chieh Chen, Zhe-Yang Huang, Che-Cheng Huang and Nan-Ku Lu, "Time-constant compensated LNA for ultra-wideband receiver," Proceedings of 2005 International Symposium on Intelligent Signal Processing and Communication Systems, 2005, pp. 561 - 564, Dec. 13-16, 2005

[56] C.-C. Sung, M.-F. Chou, C.-C. Wu, C.-S. Chen, K.-A. Wen, and C.-Y. Chang, "Low power CMOS wideband receiver design," The 16th International Conference on Microelectronics, 2004, pp. 287 - 290, Dec. 6-8, 2004.

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