Diamond Film Deposited Directly on Sapphire Substrate by Hot Filament Chemical Vapor Deposition

以熱燈絲化學氣相法直接沈積鑽石薄膜於藍寶石基材的研究

蔡宏營(Hung-Yin Tsai) ； 劉侑明(Yu-Ming Liu)

《中國機械工程學刊》 32卷1期 (2011/02) Pp. 45-51

https://doi.org/10.29979/JCSME.201102.0005

摘要

本文旨在以熱燈絲化學氣相沈積法直接將鑽石薄膜異質磊晶於藍寶石基材而不需要中介層的研究。以不同前處理方式結合熱燈絲與基材的距離、氮氣的添加、熱燈絲電流大小等三個主要參數進行探討。前處理方式包括超音波震盪、電泳法以及直接刮痕處理。由於藍寶石基材的熱膨脹係數約為鑽石的三倍，鑽石薄膜與藍寶石基材能否在沒有中介層的條件下維持一定的附著性將是極具挑戰性的。從實驗結果中可發現，透過電泳前處理方式所獲得的附著性較佳。對於氮氣添加的效果而言，少量氮氣確實增加附著性，但製程中過多的氮氣則又會限制鑽石薄膜的沈積。本研究所獲得最佳的條件是在熱燈絲電流為40A且基材與燈絲距離在5mm時約有超過90%的鑽石薄膜沈積覆蓋在藍寶石基材上。

並列摘要

Heteroepitaxial diamond films are deposited on sapphire substrate without intermediate layer in a hot-filament chemical vapor deposition. A distance between filament and substrate, nitrogen concentrations, and filament current are three parameters with different pretreatment methods. Pretreatment methods include diamond scratching, ultrasonic abrasion and electrophoresis by diamond powders. Since the thermal expansion coefficient of sapphire is about three times higher than that of diamond, good adhesion between diamond film and sapphire substrate without intermediate layer is very hard to obtain. From the experimental results, the higher adhesion between diamond film and sapphire substrate came from the pretreatment of electrophoresis by diamond powder. For nitrogen addition, some nitrogen improved the adhesion, but too much nitrogen inhibited diamond film deposition. The optimal adhesion were obtained from the current of 40 A with a distance between filament and sapphire of 5 mm. More than 90 % diamond film remained on sapphire substrate.

並列關鍵字

Diamond film ； chemical vapor deposition ； sapphire