- 期刊
Investigation of Abrasive Removal Depth of Sapphire Wafer for Different Slurry Volume Concentrations of Chemical Mechanical Polishing with Cross Pattern Polishing Pad
化學機械拋光使用方格子花紋研磨墊研磨藍寶石晶圓之不同體積濃度研磨漿研磨移除深度之分析研究
摘要
本文建立一個新的化學機械拋光研磨墊具有方格子花紋時研磨藍寶石晶圓之不同研磨漿體積濃度之研磨移除深度的理論模型；此理論模型應用二值化影像畫素分割晶圓及研磨墊為微小的像素，然後計算研磨次數。接著建立單一像素多研磨顆粒之接觸模式，估算單一研磨顆粒與晶圓間的接觸力量，由接觸力量計算單一研磨顆粒的研磨移除深度。應用此一理論模型，本文進行數值模擬，此模擬的結果，不但可以得到平均研磨移除深度，更可得到晶圓的表面狀況。本文並將模擬結果與實驗數據比較，以驗證本文所建立之理論模型的合理性。
關鍵字
無資料並列摘要
In this article, it establishes a new theoretical model of abrasive removal depth of sapphire wafer with different slurry volume concentrations during chemical mechanical polishing by polishing pad with cross pattern. The theoretical model uses binary image pixel division to divide wafer and polishing pad to be small pixels, then the polishing times of wafer polished by polishing pad is calculated. An abrasive contact model for single pixel multiple abrasive particles, to estimate the contact force between single abrasive particle and wafer is then established. When the contact force is calculated, it is possible to calculate the abrasive depth of a single abrasive particle on the surface of the sapphire wafer. Using this theoretical model, it carries out a numerical simulation with an abrasive particle of the same diameter, but with different slurry volume concentrations, the simulation results include not only the average abrasive removal depth at each pixel position, but also the surface condition of wafer. The simulation result is also compared with experimental data, in order to verify that the new model is feasible.
延伸閱讀
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