Establishment of Theoretical Model and Experiment of Abrasive Removal Depth with Consideration of the Chemical Reaction Effect of Slurry with Different Volume Concentrations and Exploration of the Effect on Chemical Mechanical Polishing of Silicon Wafer

建立考慮不同體積濃度研磨液化學反應影響的研磨移除深度理論模式及實驗並探討不同體積濃度對化學機械拋光矽晶圓之影響

林榮慶(Zone-Ching Lin) ； 王仁源(Ren-Yuan Wang) ； 陳博彥(Po-Yen Chen)

《中國機械工程學刊》 38卷5期 (2017/10) Pp. 453-467

摘要

The study combines the analytical model of the number of polishing times with the theory of specific downward force energy (SDFE) so as to establish a theoretical model of abrasive removal depth of silicon wafer with consideration of the chemical reaction effect of slurry with different volume concentrations for the use of cross-groove pattern polishing pad. Through experimental results of atomic force microscopy (AFM), we calculate the SDFE values of silicon wafer affected by the chemical reaction of slurry with different volume concentrations, establish a theoretical equation of the thickness of chemical reaction layer affected by slurry with different volume concentrations, and calculate the thicknesses of chemical reaction layer of silicon wafer affected by slurry with different volume concentrations. After establishing the theoretical model of abrasive removal depth, the paper conducts simulation and experiment of average abrasive removal depths of silicon wafer affected by the chemical reaction of slurry with different volume concentrations. The paper makes comparison of simulation and experiment results of the average abrasive removal depths, and finds that the average difference is around 4.00%. Therefore, the theoretical model of abrasive removal depth of chemical mechanical polishing (CMP) silicon wafer affected by the chemical reaction of slurry with different volume concentrations, as established by the paper, is considered reasonable. The study also uses simulation results to analyze the surface morphology of silicon wafer polished by slurry with different volume concentrations, and uses AFM constant force mode to make measurement at multiple positions on the silicon wafer surface in order to obtain the average surface roughness at each position. It is revealed that when comparing the cross-sectional form of silicon wafer after experimental polishing with the surface morphology obtained in simulation, the simulated result of the surface morphology trend of silicon wafer is qualitatively proved to be reasonable and acceptable.

關鍵字

chemical mechanical polishing ； silicon wafer ； chemical reaction of slurry ； volume concentration ； surface morphology

並列摘要

本研究結合研磨次數分析模式與比下壓能理論建立使用十字花紋研磨墊之考慮受不同體積濃度研磨液化學反應影響之矽晶圓研磨移除深度理論模式。並經由AFM實驗結果，計算出受不同體積濃度研磨液化學反應影響之矽晶圓比下壓能值，建立受不同體積濃度研磨液影響之計算化學反應層厚度的理論公式，及計算出受不同體積濃度研磨液影響的矽晶圓化學反應層厚度。本文在建立研磨移除深度理論模式後並進行受不同體積濃度研磨液化學反應影響的矽晶圓平均研磨移除深度模擬及實驗。並將兩者之研磨移除深度比較，兩者的差異值平均約在4.00%。故本文所建立的受不同體積濃度研磨液化學反應影響之化學機械拋光矽晶圓研磨移除深度理論模式及模擬結果尚稱合理。本研究亦經由模擬結果，分析不同體積濃度研磨液研磨矽晶圓的之表面形貌，並使用AFM定力模式，在晶圓表面量取多個位置，獲得各位置平均表面粗糙度，其可顯示出晶圓在實驗研磨後的斷面形態，與模擬所得之表面形貌比較，在定性上可證明模擬結果之矽晶圓表面形態之趨勢是合理可接受。