Establishment and Analysis of Calculation Method of Bonding Energy of Morse Potential Energy of The Single-Crystal Silicon Affected by Its Being Dipped in Slurry at Different Temperatures

受浸泡不同研磨液溫度影響之單晶矽莫氏勢能之結合能計算方法建立及分析

林榮慶(Zone-Ching Lin) ； 趙柏棠(Bo-Tang Zhao)

《中國機械工程學刊》 41卷3期 (2020/06) Pp. 253-263

摘要

Considering the affected by the different dipping slurry temperatures of the single-crystal silicon for the bonding energy values of Morse potential energy of single-crystal silicon, the paper uses specific down force energy (SDFE) theory and calculation method of theoretical model for calculation of the thickness of chemical reaction layer to calculate the bonding energy D value of Morse potential energy of the single-crystal silicon dipped in slurry at different temperatures. Then the paper uses molecular statics nanocutting model to simulate the cutting force and down force for cutting of single-crystal silicon, and then makes verification in order to understand the effects of different slurry temperatures on bonding energy. Finally, focusing on a fixed down force and using SDFE theory, the paper calculates the cutting depth of the single-crystal silicon substrate dipped in slurry at different temperatures, and explores the relationship between change of bonding energy for dipping in slurry at different temperatures and the cutting depth.

關鍵字

silicon ； atomic force microscopy (AFM) ； specific down force energy (SDFE) ； bonding energy of Morse potential energy ； thickness of chemical reaction layer ； slurry temperature

並列摘要

本研究以比下壓能理論及計算化學反應層厚度理論模式的創新計算方法計算浸泡不同研磨液溫度之單晶矽莫氏勢能的結合能D值，再用分子靜力學奈米切削模式模擬切削單晶矽的切削力與下壓力，並進行驗證，以瞭解不同研磨液溫度對結合能的影響。最後針對固定下壓力，用比下壓能理論計算浸泡不同研磨液溫度單晶矽基板之切削深度，探討浸泡不同研磨液溫度之結合能的變化和切削深度的關係。