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Effects of Chip Load on Phase Transformation and Residual Stress in Silicon Grinding

切屑負載對矽研磨加工中相變化和殘留應力影響之研究

摘要


This study examines the surface formation mechanism, near-surface residual stresses, phase transformations, and their interrelationships in surface grinding of silicon (100) under various chip loading conditions. Near-surface residual stresses of the ground surfaces are found to be all compressive for all chip loading conditions with the transverse residual stress more affected by the chip load. Through Raman spectra of the ground surface, it is shown that the Si-I phase tends to transform to Si-III/Si-XII at a lager chip load, and to amorphous phase at a smaller chip load. SEM surface topography reveals that the degree of plowing in surface formation increases with chip load, and that surface residual stress and phase transformation can be correlated to the extent of plowing phenomenon on the silicon surface during the material removal process. It is concluded that grinding condition with higher chip load leads to the formation of Si-III/Si-XII phases as well as a higher transverse surface residual stress while a smaller chip load is favorable in the formation of an amorphous phase and low residual stress.

並列摘要


本研究探討不同切屑負載下矽(100)表面研磨中表面形成機制、近表面殘留應力、相變化及其相互關係。發現在所有切屑負載條件下,近表面殘留應力皆為壓應力,而縱向殘留應力受切屑負載影響較大。通過表面的拉曼光譜,可見Si-I相在較大的切屑負載下趨於轉變為Si-III/Si-XII,而在較小的切屑負載下趨於轉變為非晶相。SEM表面形貌顯示在材料去除過程中,隨著切屑負載增加,表面生成之犁切現象增加,並直接影響表面殘留應力和相變化。實驗結果發現,切屑負載較高的磨削條件會導致形成Si-III/Si-XII相以及較高的橫向殘餘應力,而較小的切屑載荷則有利於形成非晶相和較低的殘留應力。

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