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The Optical, Electrical, and Structural Characteristics of Copper-Indium-Selenium Thin Films
並列摘要
Polycrystalline thin films of Copper-Indium-Selenium (CIS) have been characterised using various experimental techniques. Optical absorption and transmission measurements on different compositions of CIS films were observed and the absorption coefficient was determined. The electrical conductivity for the CIS thin films was determined by the Van der Pauw technique and it was found that p-type films have higher conductivity than n-type films. The grain size, composition, structure and the spacing of the elements of CIS thin films were determined by XRD. The reaction temperature of CIS formation was found to be 260℃ in vacuum. These compounds are extensively used in solar cell technology as absorber layers due to their exciting characteristics.
並列關鍵字
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延伸閱讀
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