並列摘要
Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2-1.6μm lasers, optical amplifiers and high power Raman pump lasers that will be required in the networks to provide high speed communications to the desktop. Two particularly critical devices are 1) vertical cavity surface emitting lasers (VCSELs) which must operate un-cooled at high data rates (≥10Gbps), and 2) high power (≥500m W) edge emitting lasers for Raman amplifier pumps. Despite the fact that GaInNAs has been grown successfully, several challenges remain, including the limited solubility of N, phase segregation, non-radiative defects caused by the low growth temperature and ion damage from the N plasma source. This paper describes progress in overcoming some of the material challenges and progress in realizing record setting edge emitting lasers and the first VCSELs operating at 1.5μm based on GaInNAsSb.
並列關鍵字
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延伸閱讀
- 蘇炎坤、徐碩賢、吳俊德（2004）。Investigation of Spontaneous Ordering Effect in GaInNTP Grown by MBE。真空科技，17(3)，38-41。https://doi.org/10.29808/JVSROC.200411.0007
- 彭墐雋（2016）。Study on Dual-wavelength Self-mode-locked Nd:YAG Lasers〔碩士論文，國立交通大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0030-0803201714440125
- 盧奕（2019）。High-brightness Laser White Light Based on Phosphor Characteristic Analysis and Measurement〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU201902612
- 蕭富駿（2017）。Microwave Generation in the Three-Section DFB Laser〔碩士論文，國立交通大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0030-0705201811523287