以反應性射頻磁控濺鍍法在聚對苯二甲酸乙二醇酯基材上製備氮化鈦薄膜與特性分析

林明志 ； 張立信

《真空科技》 19卷3期 (2006/12) Pp. 4-11

https://doi.org/10.29808/JVSROC.200612.0001

摘要

本研究應用反應性射頻磁控濺鍍技術，藉由調控濺鍍功率及基材負偏壓等製程參數，在聚對苯二甲酸乙二醇酯(PET)基材上成功鍍出優質的氮化鈦(TiN)薄膜。實驗結果顯示，在40W濺鍍功率下所得之TiN薄膜表面具有許多小孔洞。隨著濺鍍功率從40W到140W，TiN薄膜呈現團聚島狀形貌且緻密性提高。其表面粗糙度隨著基材負偏壓的提高而增加。TiN薄膜為非晶質結構，而N與Ti成分的莫耳比例皆相當接近1:1。TiN薄膜之沉積速率隨著濺鍍功率的提高而快速增加，於基材偏壓-40V時具有最大之薄膜沉積速率並呈現最佳之阻絕水／氧滲透成效。過高的基材負偏壓導致再濺射現象而降低薄膜厚度並因而降低其阻水／阻氧率。本研究在PET基材鍍上TiN薄膜之最佳透水率與透氧率分別為0.98g/平方公尺-day-atm及0.6cc/平方公尺-day-atm，分別為未鍍膜前之0.18與0.02倍。

關鍵字

反應性磁控濺鍍 ； 聚對苯二甲酸乙二醇酯基材 ； 氮化鈦薄膜 ； 透水／透氧率

並列摘要

Titanium nitride (TiN) films were deposited on polyethylene terephthalate (PET) substrates by means of the reactive magnetron radio frequency (RF) sputtering technique with varying RF power and substrate bias. The experimental results showed that the TiN thin films deposited at a low RF power of 40 W have a lot of small holes on their surfaces. With increasing RF power, TiN thin films possessing island-type surface morphology become denser. The surface roughness of TiN thin films was found to increase with raising substrate bias. All TiN thin films are amorphous and their N to Ti mole ratio is almost of 1:1. The deposition rate increases rapidly with increasing RF power. The deposition at a RF power of 140 W and substrate bias of -40 V exhibit the highest rate and the best resistance against the permeation of water vapor and oxygen. Over-high substrate bias induces severe re-sputtering and hence decreases the film's thickness and the resistance. The lowest water vapor and oxygen transmission rate of the TiN films deposited on PET substrate in this study were 0.98 g/m^2-day-atm and 0.60 cc/m^2-day-atm, respectively. These water/oxygen permeation rates are 0.18 and 0.22, respectively, of those of the blank PET substrate.

並列關鍵字

Titanium nitride ； RF reactive radio frequency magnetron sputtering ； PET ； Water vapor/Oxygen transmission rate