摘要
傳統之銅金屬化製程需於銅矽間置一擴散阻障層(Diffusion Barrier)以阻絕銅矽之間的反應，但在元件越做越小、密度越來越高、阻障層日益減薄的趨勢下，所衍生的整體電阻上升、無法開發既薄(＜2nm)且耐高溫的阻障層之種種問題亦需正視。本文爲基於此點考量提出成本低廉、提早因應未來需求的無阻障層之先進銅金屬化製程，並將近年先進銅金屬化無阻障層製程之相關研究成果以文獻回顧方式作一介紹。
關鍵字
無資料並列摘要
In the Cu metallization processes, a layer of diffusion barrier is required between the Cu and Si substrate in order to prevent detrimental interactions between them. Owing to the size reduction in microelectronic devices and the increase in their packing densities, the diffusion barrier thickness has to decrease to less than 2 nm within next ten years for the microelectronic applications. A thin layer of diffusion barrier with good thermal properties is extremely difficult to fabricate. In this article, we propose a cost-saving method, advanced Cu barrierless metallization. This method not only satisfies the future requirements for Cu interconnects, but also provides a solution to the above mentioned problems. This article presents a review of our recent studies related to this advanced Cu barrierless metallization.
並列關鍵字
無資料被引用紀錄
延伸閱讀
- Rong, H. J. (2015). 高強度高導電銅合金之開發 [master's thesis, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-0312201510274290
- 陳松德、唐英森、李健志、陳錦山（2006）。創新性無電鍍沉積超薄鈷基阻障層在銅金屬化之應用。真空科技，19(2)，147-152。https://doi.org/10.29808/JVSROC.200611.0031
- 潘怡靜（2012）。銅合金化ADI之低溫複合表面改質及其特性研究〔碩士論文，大同大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0081-3001201315112919
- 吳佩璇（2011）。Surface properties and macrominerals binding capacityof media-milled cellulose〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2011.00913
- 潘敬儒（2022）。A study on anti-sulfurization of modified silver paste〔碩士論文，國立屏東科技大學〕。華藝線上圖書館。https://doi.org/10.6346/NPUST202200050