在近似晶格匹配的可撓金屬箔片上製造全彩氮化鎵基發光二極體之方法

Fabrication of full-color GaN-base light-emitting diodes on nearly lattice-matched flexible metal foils

唐開平(KAI-PING TANG)

《真空科技》 31卷3期 (2018/09) Pp. 44-48

摘要

作者藉由此篇來自日本東京大學Fujioka et al.的論文激發而來匯集相關文獻，以探討以磁控濺鍍沉積法(Magnetron Sputtering Deposition, MSD)來完成在玻璃基板上直接成長氮化鎵(GaN)發光二極體(LED)元件，以形成主動式微發光顯示器(micro LED display)而無需使用巨量轉移技術之可能性。

關鍵字

磁控濺鍍沉積法 ； 氮化鎵 ； 發光二極體 ； 微發光顯示器

並列摘要

Inspired by the paper of ＂Fabrication of full-color GaN-base light-emitting diodes on nearly lattice-matched flexible metal foils＂ from TOKYO University, Japan, the author collected other related papers for exploring the possibility of growing micro LED devices by Magnetron Sputtering Deposition (MSD) and deposited micro LEDs directly onto glass substrate with low-temperature ploy-silicon (LTPS) or Indium-Gallium-Zinc-Oxide (IGZO) TFT devices without using the popular mass transfer process/technology for forming micro LED displays.

並列關鍵字

GaN ； micro LED ； LTPS ； IGZO ； Magnetron Sputtering Deposition (MSD) ； mass transfer