Back-end-of-line Defect Analysis for Rnv8T Nonvolatile SRAM

針對Rnv8T非揮發性靜態隨機存取記憶體於後段製程中之錯誤缺陷分析

Bing-Chuan Bai ； Kun-Lun Luo ； Chen-An Chen ； Yee-Wen Chen ； Ming-Hsueh Wu ； Chun-Lung Hsu ； Liang-Chia Cheng ； Chien-Mo Li

《電腦與通訊》 160期 (2014/12) Pp. 68-73

並列摘要

Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Conventional test methods for volatile SRAM or resistive RAM are not suitable for nonvolatile SRAM. Because of the connected structure of the nonvolatile SRAM, the volatile and nonvolatile parts of a nonvolatile SRAM could not be tested independently. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on simulations after injecting defects. Simulation results showed that the injected defects caused stuck-at and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straightforward test algorithm is proposed to detect the escaped faults.

並列關鍵字

Nonvolatile SRAM ； Defect-based Testing ； Rnv8T ； RRAM ； Back-end-of-line