CIGS太陽能電池－非鎘緩衝層材料及製程技術發展

CIGS Solar Cell-The Development of Cd-Free Buffer Layer Materials and Process Technology

蔡智斌(Chih-Pin Tsai) ； 簡志宇(Chih-Yu Chien) ； 魏士淵(Shin-Yuan We) ； 賴志煌(Chih-Huang Lai)

《科儀新知》 181期 (2011/04) Pp. 5-12

https://doi.org/10.29662/IT.201104.0001

摘要

非鎘緩衝層的開發為發展CIGS太陽能電池重要的課題之一。目前較高效率的CIGS太陽能電池仍然以硫化鎘(CdS)作為緩衝層的主要材料，為減少鎘對環境的衝擊又能達到高光電轉化率，並符合產業化的需求，各界無不積極開發取代CdS緩衝層的材料及製程技術。緩衝層位於CIGS吸光層及ZnO:Al窗口層之間，與CIGS形成太陽能電池中重要的p-n接面。本文將介紹緩衝層於太陽能電池中的主要功用及其產業化時所面臨的關鍵挑戰，並詳述目前最有潛力的三種非鎘緩衝層材料：硫化鋅(ZnS)、硫化銦(In2S3)及氧化鎂鋅(Zn(下標 1-x)Mg(下標 x)O)在高效率太陽能電池中的發展現況，並對其相關的非真空如化學浴沉積法及真空如濺鍍、蒸鍍，原子層沉積法等製程技術進行探討。

並列摘要

The development of Cd-free buffer layer is one of the most important topics for the evolution of CIGS solar cell Nowadays, the CdS is typically used as buffer layer in high efficiency CIGS solar cell. However, Cd is very toxic and makes great impact to our environment. To reduce the usage of Cd and keep the high efficiency of CIGS solar cell for the commercializing demand, a lot of effort has been done for the exploration of Cd-free buffer layer. In this article, we introduced the main functions of buffer layer in CIGS solar cell and the technological challenges on buffer layer deposition for mass production. Three potential candidate ZnS, In2S3 and Zn(subscript 1-x)Mg(subscript x)O to replace the CdS buffer layer and their corresponding deposition technologies such as sputter, evaporation and ALD were discussed.