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  • 學位論文

CIS/ZnO奈米柱疊層薄膜太陽能電池之製作與特性量測

Fabrication and Characterization of Stacked CIS/ZnO Nanorod Thin Film Solar Cells

指導教授 : 吳幼麟

摘要


在現今硫化銦銅(CIS)太陽能電池中多以濺鍍(Sputtering)、分子束磊晶(Molecular Beam Epitaxy)、熱蒸鍍(Evaporation)等方式做為主要的製作方式。本論文探討以低溫、低成本且可以大面積製造的全溶液製程來組成CIS/ZnO奈米柱疊層薄膜太陽能電池。 本論文利用In-Situ全溶液疊層製程在FTO玻璃基板上設計CIS/ZnO奈米柱疊層薄膜太陽能電池,並以蒸鍍金做為金屬電極。ZnO奈米柱是利用超音波霧化噴塗熱解沉積之種晶層以水熱法長成,CIS吸收層、In2S3緩衝層及CuSCN電洞傳導層則均以旋轉塗佈法完成。我們成功的製作出全溶液製程的具CIS/ZnO奈米柱薄膜太陽能電池並量測其特性。 本論文針對包括旋塗次數及退火加熱環境等不同製程參數所製作的CIS太陽能電池,量測其黑暗及照光後之電流-電壓(I-V)電性。我們發現CuInS2薄膜吸收層旋塗(Spin Coating) 之次數,基本上可以增加太陽能電池的效率,開路電壓(Voc)以及短路電流密度(Jsc) 亦可透過適當的退火加熱環境而提高。我們也比較了有無ZnO奈米柱對CIS薄膜太陽能電池特性之影響,實驗結果顯示有ZnO奈米柱之太陽能電池展現了較佳的效率及光補捉特性,這是因為ZnO奈米柱提供了較大的介面主動區的面積所致。

並列摘要


The CuInS2 (CIS) thin film solar cell has been synthesized by various methods such as sputtering, molecular beam epitaxy, and co-evaporation. In this work, an all-solution process was adopted to fabricate the solar cell with CIS thin film stacked on ZnO-nanorads for the purpose of low temperature, low fabrication cost, and being able to achieve large area manufacturing In this thesis, in-situ method was used to prepare CIS precursor solution for solar cell fabrication. The ZnO nanorod was prepared by hydrothermal method using ultrasonic spray for the ZnO seed layer deposition. The CIS absorber layer, the In2S3 buffer layer as well as the CuSCN hole transporting layer were all prepared by spin coating. The all-solution processed CIS thin film solar cell with an active CIS / ZnO-nanorods stacked layer was successfully fabricated and its characteristics were investigated. The dark and illuminated I-V characteristics were measured for the CIS solar cells prepared with different process parameters including the number of times of the spin coating as well as the annealing environment. It is found that the cell efficiency basically increases with increasing the number of time of the CIS spin coating. Comparison between the CIS solar cells with and without the ZnO nanorods shows the one with ZnO nanorods has better efficiency because the ZnO nanorods provide more interfacial active area and have better light-trapping property.

參考文獻


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