CIS薄膜太陽能電池元件之成長與分析

Growth and Analysis of CuInS2 Thin Film Solar Cell Device

謝青地(Ching-De Hsieh)

指導教授 ： 黃景良 ； 李明

崑山科技大學/工程學院/機械工程研究所/碩士(2007年)

摘要

本論文是以硫化法成長硫化銅銦（CuInS2）薄膜，此方法需先成長一銅銦預沈積層然後再進行硫化。本論文以銅銦原子為0.55的比例來作預沉積，然後我們使用X光繞射儀與掃瞄式電子顯微鏡去分析硫化銅銦結晶狀況。
溫度在400℃至450℃之間硫化60分鐘， 可得到較多CuInS2的相而產生較少的Cu-S或In-S系列的二次相產生；而500℃硫化則會使薄膜分解。另外，銦在硫化過程中會因為長時間與高溫度的硫化，使得銦在硫化過程中快速的流失，而在硫化結束後導致銦不足的現象，在此可藉由預沈積層的調配來補足銦的散失。

關鍵字

太陽能電池 ； 硫化 ； 硫化銅銦

並列摘要

The thesis has a proposal for CuInS2-based solar cells are prepared by a rapid thermal sulfide process. All samples are pre-prepared under Cu excess with atomic ratio Cu/In = 0.55 on sola glass. The CuInS2 thin film preparation with Cu/In layers put into thermal sulfur vapor to sulfide. The CuInS2 thin film form by this process has well crystalline, as seen from XRD and SEM. The conversion rate of CuInS2 thin film solar cell has reached 11.4%.
The optimal sulfide condition is at sulfur vapor from 400?aC to 450?aC for 60 minutes. This method can produce more CuInS2 form and less Cu-S or In-S form, but the CuInS2 film is resolved at 500?aC. In elements will loss in sulfide procedure. The surplus indium will be deposited to Cu/In film in pre-prepared procedure for remaining Cu/In ratio. We successfully have prepared high purified CuInS2 thin film by rapid thermal sulfide process.

並列關鍵字

solar cell ； sulfurization ； CuInS2

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