適用於金氧半場效應電晶體表面電位模型PSP之參數萃取器

A Parameter Extractor for Surface-Potential-Based PSP MOSFET Compact Modeling

曾毓翔 ； 李義明

《國家奈米元件實驗室奈米通訊》 17卷1期 (2010/03) Pp. 13-20

https://doi.org/10.29913/NDLC.201003.0003

摘要

電晶體等效電路模型是互補式金氧半場效應電晶體(CMOS)元件製造與超大型積體電路設計不可缺少的橋樑。隨著金氧半場效應電晶體(MOSFET)的尺寸微縮到奈米等級，以表面電位為核心的電晶體模型被認為是最接近物理原型的電晶體模型，可引入最完整的短通道電晶體所浮現的物理效應。PSP模型是新一代的以表面電位為核心的CMOS電晶體模型，已被選定為CMOS電晶體模型的標準。然而，PSP模型的參數萃取問題仍待研究。本研究開發了適用PSP模型且具視窗界面的參數萃取器，利用此參數萃取器，我們依序將PSP模型和Ⅰ(下標 d)-Ⅴ(下標 gs)及Ⅰ(下標 d)-Ⅴ(下標 ds)相關的參數最佳化。本參數萃取器萃取出準確的PSP模型參數對下世代奈米CMOS電路的製造與設計有很大的幫助。

關鍵字

等效電路模型 ； 參數萃取 ； 表面電位 ； 金氧半場效應電晶體

並列摘要

Compact models have been indispensable bridges between CMOS device fabrication and VLSI circuit design over the past decades. Among the state-of-the-art MOSFET compact models, surface-potential-based models are regarded as the advanced ones to contain all relevant physical effects with the aggressive down-scaling of CMOS technologies. PSP MOSFET model is one of the most popular surface-potential-based models and has been selected as a new standard for nanoscale CMOS devices. For PSP model, parameter extraction is still required to construct an accurate and predictable model. In this work, a friendly computer-aided design (CAD) tool for PSP model parameter is developed. By means of the developed extraction tool and the proposed physical-based extraction procedure, the PSP model parameters are sequentially optimized as compared with the Ⅰ(subscript d)-Ⅴ(subscript gs) and Ⅰ(subscript d)-Ⅴ(subscript ds) characteristics of CMOS devices. The extracted accurate PSP model parameters will benefit VLSI circuits design and fabrication in Nano-CMOS era.

並列關鍵字

Compact Model ； Parameter Extraction ； Surface Potential ； MOSFETs