- 期刊
局部選擇性紅外光雷射退火製程實現低功耗後段相容三維可堆疊閘極優先奈米場效電晶體
Enabling Low Power BEOL Compatible Monolithic 3D+ Nanoelectronics for IoTs Using Local and Selective Far-Infrared Ray Laser Anneal Technology
摘要
本研究採用區域局部紅外光雷射退火製程展示三維可堆疊閘極優先奈米場效電晶體，包含三維可堆疊矽晶及多晶鍺奈米線場效電晶體。此三維可堆疊結構矽晶奈米場效電晶體採用綠光雷射結晶及紅外光雷射活化其次臨界擺幅可達＜90mV/dec 及其驅動電流可達n-type: 310μA/μm and p-type: 220A/μm。7 奈米多晶鍺奈米線場效電晶體展現其高I_on/I_off ratio (＞5×10^4) 以及小漏極感應勢壘降低效應。其6T SRAM 在V_d=0.4V 展現優異的SNM 值130 mV 其線路特性非常適合應用在低功耗低熱預算三維可堆疊線路的物聯網應用。
並列摘要
Local and selective far-infrared ray laser annealing (FIR-LA) process with very short heating duration (＜10us) and low substrate temperature (＜400℃) enables sequentially stacked gatefirst nanowire FETs (NWFETs), including 3D+ Si NWFET and poly-Ge junctionless (JL) NWFET, and BEOL compatible monolithic 3D+ nanoelectronics. The 3D+ Si NWFETs, demonstrated by green nano-second laser crystallization (GNS-LC) and FIR-LA processes exhibit steep subthreshold swing (＜90mV/dec.) and high driving current (n-type: 310uA/um and p-type: 220μA/μm). The7nm poly-Ge JLNWFET shows high I_on/I_off ratio (＞5×10^4) and small DIBL. Furthermore, the thus fabricated low driving voltage 6T SRAM shows a static noise margin (SNM) of 130 mV at V_d=0.4V enabling the low power and low cost 3D+IC for internet of things (IoTs).
延伸閱讀
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