使用金屬閘極或多晶矽閘極在HfSiON絕緣層上之元件電性研究

The Electrical Characteristics of Devices with Metal gate or Poly-Si gate on HfSiON Dielectric

陳啓文(Chii-Wen Chen) ； 葉郁龍(Yu-Long Yeh) ； 賴信誠(Hsin-Cheng Lai) ； 葉文冠(Wen-Kuan Yeh) ； 陳育廷(Yu-Ting Chen)

《明新學報》 35卷2期 (2009/08) Pp. 19-24

https://doi.org/10.29688/MHJ.200908.0004

摘要

本文探討金屬閘極與多晶矽閘極之高介電係數閘極絕緣層NMOSFET電性之比較。由實驗我們觀察到金屬閘極元件具有較低的閘極穿隧漏電流，這是因為多晶矽與HfSiON會互相作用，造成多晶矽閘極HfSiON界面缺陷密度或HfSiON閘極絕緣層內缺陷密度之產生，因而劣化閘極堆疊之品質。因此，在利用高介電係數材料當作元件之閘極絕緣層的同時，需用金屬閘極，以達到較好的元件特性。

關鍵字

閘極穿隧漏電流 ； 高介電係數材料 ； 金屬閘極

並列摘要

This article is about comparing the NMOSFET electrical characteristic of Metal gate to that of Poly-Si gate. According to the experiments, we find Metal gate device has which results in a lower direct-tunneling current. It is attributed to the interaction between Poly-Si and HfSiON, the interface trap density of Poly-Si gate and HfSiON or that in the HfSiON gate delectric, and then lowers the quality of gate stacking. As a result, it is necessary to use the Metal gate when using the high-k material as the gate dielectric to get better device characteristics.

並列關鍵字

direct-tunneling current ； high-k material ； metal gate

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