- 期刊
MODEL AND PERFORMANCE FOR NANOMETER MOSFET DEVICE AND CURRENT MIRROR CIRCUIT CONSIDERING RANDOM DOPANT FLUCTUATION
並列摘要
As MOSFETs are scaled down to nanometer feature size, random dopant fluctuation (RDF) is crucial to the performance and yield of integrated devices and circuits. This paper presents a RDF-induced MOSFET current mismatch model for circuit analysis. The model is accurate and with 2.56% error compared to HSPICE Monte Carlo simulations. The performance parameters are derived with design decisions for MOSFET current mirror circuit considering RDF. Our simulation data confirm that IC designers should select appropriate dimensions and biasing conditions to meet the different specifications if RDF is taken into account in nanometer CMOS analog design.
延伸閱讀
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