- 期刊
A PHYSICAL MODEL FOR MOSFET DRAIN CURRENT IN NON-OHMIC REGIME USING OHMIC REGIME OPERATION
摘要
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic I_(d0)(V_d) avoiding velocity saturation phenomena, can be obtained from ohmic characteristic l_d(V_g) and compared with the experimental characteristic l_d(V_d).
延伸閱讀
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