CMOS能隙參考電壓電路(CMOS Bandgap Voltage Reference Circuit, CMOS BGVR),擁有高阻抗、低消耗功率與低溫度係數之特性,更因其整體效率之提升,近年來成爲多數混合訊號積體電路中,組成參考電壓電源之核心架構之主流。本文針對設計組成一CMOS BGVR電路之基本單元:參考偏壓電流源、誤差放大器、核心參考電壓電路加以分析與模擬,最後利用TSMC 0.35-μm CMOS製程技術,設計一供應電壓爲2V,參考輸出電壓爲1.2V之CMOS BGVR電路,探討操作在不同溫度下,其溫度飄移之穩定度,爲了反應供應電壓改變時,CMOS BGVR之整體電路有良好的穩定輸出,整體CMOS BGVR電路之溫度係數補償,均在本文中加以分析與設計之考量。
Bandgap Voltage Reference Circuit (BGVR) is main sub-structure of mixed-mode Integrated Circuit system in recent years, due to its high impedance, low power dissipation, high efficiency and low temperature coefficient characteristics. In this paper, the main components within CMOS BGVR consist of the basic current source, an error amplifier and the core cell of reference voltage circuit are analyzed and discussed in detail. To demonstrate the feasibility of the design procedure, a CMOS BGVR with supply voltage 2.0V and reference output voltage 1.2V is designed and fabricated using TSMC 0.35um CMOS technology. A temperature coefficient scheme by poly and p-diffusion resistor is presented that provides both a fast transient response and full range temperature stability from 0℃ to 100℃ with temperature coefficient less 16ppm/℃ and output voltage variation less 1mV. The PSRR, CMRR, slew rate and temperature coefficient are analyzed and discussed in this paper.