- 期刊
- OpenAccess
應用邊界元素法模擬化學機械研磨之晶圓應力分佈對表面不均勻度的影響
The Application of Boundary Element Method to Simulate the Stress Distribution and Nonuniformity on Wafer Surface of Chemical Mechanical Polishing Process
摘要
在半導體製程中，化學機械研磨（Chemical Mechanical Polishing，簡稱CMP）對於提高晶圓表面的平坦度是一項很重要的程序。為了有效的控制材料移除率，本論文將使用其可減少電腦記憶體的資源運用且在短時間內求解軸對稱問題的邊界元素法，來建立化學機械研磨之二維軸對稱準靜態模型。利用邊界元素法分析晶圓與研磨墊之間的應力分佈與表面不均勻度的關係。
並列摘要
Chemical mechanical polishing (CMP) is important in improving planarization and materials remove ratio of wafer in semiconductor manufacturing. We used a method, boundary element method (BEM), can reduce computer memory and computing time to simulate the CMP process. This study will build a 2-D axisymmetric quasi-static model for chemical mechanical polishing process. Analysis the stress distribution and nonuniformity on the wafer-pad interface was solved by BEM.
延伸閱讀
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