Binary Image Analysis and the Stress Analysis of Wafer of Compensated Chemical Mechanical Polishing (CCMP)

補償式化學機械拋光之二值化影像分析與晶圓應力分析

林榮慶(Zone-Ching Lin) ； 李永華(Yung-Hua Lee)

《中國機械工程學刊》 32卷1期 (2011/02) Pp. 35-44

https://doi.org/10.29979/JCSME.201102.0004

摘要

本文在探討一種新的化學機械拋光之應力分析機制。在昔知過去在化學機械拋光的研究領域中，均未有針對有無溝槽花紋之研磨墊與晶圓之接觸情形進行討論。同時亦未針對有動態接觸行為之拋光情形進行分析，因此本文則藉由二值化像素分割的特性，搭配有限元素法來分析晶圓被研磨墊接觸後，以二值化像素分割之應力情形，同時再搭配二值化可分析的動態座標的特性，將可針對研磨墊與晶圓接觸後，在任意點的座標位置的接觸情形。本文針對有／無花紋研磨墊與晶圓之接觸方式，並結合有限元素法所建構出之準靜態有限分析之晶圓接觸理論。在模擬的結果，發現了有著不同應變環的特別現象，這是有別於傳統的化學機械拋光製程。其中一個是無花紋研磨墊所產生在晶圓上的邊際應變環效應。另一個則是棋盤格研磨墊所產生在晶圓上的邊際應變環效應。

並列摘要

The paper investigates a new analysis mechanism of the stress of compensated chemical mechanical polishing (CMP). In the past most researches only investigate the wafer stress distribution for CMP. And they were seldom investigation the wafer stress distribution for CCMP. And the past researches did not include any the specific time or a duration time contact stress distribution analysis and status analysis. This paper uses the binary method and FEM method to find out the specific time or a duration time contact stress distribution status. In this paper, it uses the binary image dividing technique to investigate the number of polishing times and the contact frequency. As to the innovativeness of this paper, the paper employs the concept of binary image dividing to analyse the contact ways between wafer and polishing pad with/without pattern for CCMP, and also uses FEM to obtain the wafer contact stress distributions of difference polishing time for CCMP.

並列關鍵字

compensated chemical mechanical polishing CCMP ； binarization