- 學位論文
應用邊界元素法模擬化學機械研磨之晶圓應力分佈對表面不均勻度的影響
The Application of boundary element method to simulate the stress distribution and nonuniformity on wafer surface of chemical mechanical polishing process
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摘要
在半導體製程中，化學機械研磨(Chemical mechanical Polishing,簡稱CMP)對於提高晶圓表面的平坦度是一項很重要的程序。為了有效的控制材料移除率，本論文將使用其可減少電腦記憶體的資源運用且在短時間內求解軸對稱問題;邊界元素法，來建立化學機械研磨之二維軸對稱準靜態模型。並且分析化學機械研磨的過程中，晶圓與研磨墊之間的von Mises 應力分佈與材料移除率的關係，探討引起晶圓表面不均勻度(Non-Uniformity)的原因。藉由改變研磨墊的厚度和彈性模數與施加在晶圓背面之壓力，觀察其對於表面應力與不均勻度所受到的影響，並討論晶圓表面各方向的應力變化。
並列摘要
Chemical mechanical polishing (CMP) is important in improving planarization and materials remove ratio of wafer in semiconductor manufacturing. We used a method, boundary element method (BEM), can reduce computer memory and computing time to simulate the CMP process. This study will build a 2-D axisymmetric quasi-static model for chemical mechanical polishing process. The analysis of von Mises stress on the wafer-pad interface was solved by BEM. The effects of thickness, elastic modulus, down force on the non-uniformity of wafer were investigated. The variation of various stress distribution on the wafer were also discussed.
參考文獻
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延伸閱讀
- 黃彥志（2012）。結合邊界元素法和推論多項式網路建立化學機械研磨之晶圓表面不均勻度之預測模式〔碩士論文，元智大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0009-2801201415022316
- 李連杰（2020）。除電參數分析及實驗設計於晶圓蝕刻後之偏移量改善研究〔碩士論文，國立交通大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0030-1504202111205639
- Lin, Z. C., & Lee, Y. H. (2011). 補償式化學機械拋光之二值化影像分析與晶圓應力分析. 中國機械工程學刊, 32(1), 35-44. https://doi.org/10.29979/JCSME.201102.0004
- 張秋貴（2003）。應用實驗設計法調整蝕刻製程程式以改善晶圓允收測試之接觸窗阻值電性之研究〔碩士論文，中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu200300037
- Lin, Z. C., Chen, P. Y., & Fang, X. R. (2018). Simulation Model Establishment and Experimental Verification for Cutting of Trapezium Groove on Single-Crystal Silicon Nanochannel to Expected Depth and Expected Width. 中國機械工程學刊, 39(6), 545-554. https://www.airitilibrary.com/Article/Detail?DocID=02579731-201812-201903070015-201903070015-545-554