Examination about Fabricating Conditions and Photoluminescence Intensity of Silicon Fine Particles

K. Tanaka ； S. Hori

《Mobile Computing》 4卷 (2015/02) Pp. 22-27

https://doi.org/10.14355/mc.2015.04.003

並列摘要

We fabricated Si:SiO2 films and assessed its optical characteristics using photoluminescence spectroscopy. Sputtering was our method of fabricating thin film including silicon fine particles. Argon gas was used as an electrical discharge gas for the sputtering, pressure of the gas was 0.5 Pa and 0.9 Pa. Silicon (Si) and silicon dioxide (SiO2) were put on a sputtering target. Composition ratio of the Si for the target was during 0.04 and 0.16. Growth rate of thin film was 0.18 nm/s at 0.5 Pa and 0.10 nm/s at 0.9 Pa, which didn't depend on the composition ratio. For the photoluminescence spectra of the Si:SiO2 films fabricated, emission intensity was higher in the shorter than 450 nm region. And such intensity for 0.9 Pa was higher than it for 0.5 Pa, was higher at low composition ratio. A rising at 420 nm for 0.5 Pa spectra, was discussed in a view of quantum confinement effect.

並列關鍵字

Si:SiO_2 Films ； Silicon ； Fine Particles ； Co-sputtering ； Photoluminescence