The nanofabrication by friction-induced selective etching of Si_3N_4 film on monocrystalline silicon substrate strongly depended on the pre-scratching load. At relatively low scratching load, the selective etching would be failure due to the elastic deformation of Si_3N_4 material. However, extreme high scratching load would induce the occurrence of partial material spalling, which lowered the equality of nanofabrication. The plastic deformation of Si/Si_3N_4 sample under the scratching load between 3 mN to 60 mN was identified as the most suitable stage for selective etching. More serious material damage formed increased the etching rate in HF solution and improved the fabrication efficiency. Large-area structures without obvious surface damage were fabricated after optimized the scratching load. The results can not only deepen the understanding of the load effect on the low destructive nanofabrication by friction-induced selective etching on Si/Si_3N_4 sample, but also be helpful to promote the utilization of related technique.