高附著性玻璃金屬化之濕式製程技術

Wet-Process Technology for High Adhesion Glass Metallization

王偉彥 ； 張佑祥 ； 黃萌祺

《機械工業雜誌》 471期 (2022/06) Pp. 22-28

摘要

玻璃基材是一具有潛力能夠取代矽應用於中介層的材料，因其具備低介電常數與可調式熱膨脹係數，另外製作成本相較於矽低廉且無尺寸上的限制，然而玻璃基材與銅層存在附著性不佳之問題，導致玻璃基材遲遲未被廣泛應用於中介層上。為解決此一難題，本文開發一高附著性玻璃金屬化之濕式製程技術，藉由獨創合成塗料於玻璃上塗佈一附著層並結合濕式金屬化技術，最終玻璃與銅層附著力達到約452 gf/cm，近乎於商用附著力標準值，此外，本技術也可應用於高深寬比的通孔玻璃中，並且達到均勻且連續的金屬鍍膜。

關鍵字

玻璃 ； 金屬化 ； 中介層 ； 化學鍍 ； 附著力

並列摘要

With properties of low dielectric constant and adjustable thermal expansion coefficient, the glass substrate is a material that has the potential to replace silicon for interposers. In addition, the production cost of glass substrate is lower than that of silicon and there is no size limitation. However, the adhesion between the glass substrate and the copper layer is poor, resulting in the glass substrate not being widely used on the interposer. In order to solve this problem, a novel wet-process technology for high adhesion glass metallization is developed. By coating an adhesion layer on the glass with the distinctive synthetic paint and combining with wet-process metallization technology, the adhesion values between glass substrate and copper layer reaches about 452 gf/ cm, this is close to the standard value of commercial one. In addition, this technology can also be applied to high aspect ratio through-hole glass and achieve uniform and continuous metal coating.

並列關鍵字

Glass ； Metallization ； Interposer ； Electroless plating ； Adhesion

參考文獻

J. Lau, et al., “Redistribution layers (RDLs) for 2.5 D/3D IC integration,ˮ Journal of Microelectronics and Electronic Packaging 11(1), 16–24, 2014.

U. Ahmad, et al., “Interposer technologies for high-performance applications,ˮ IEEE Transactions on Components, Packaging And Manufacturing Technology 7(6), 819-828, 2017

V. Sukumaran, et al., “Through-package-via formation and metallization of glass interposers,ˮ in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), 557-563, 2010.

B. K. Wang, et al., “Thin glass substrates development and integration for through glass vias (TGV) with copper (Cu) interconnects,ˮ in 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 247-250, 2012.

A. B. Shorey, et al., “Progress and application of through glass via (TGV) technology,ˮ in 2016 Pan Pacific Microelectronics Symposium (Pan Pacific), 1-6, 2016.