Electrical Characterization and Reliability Test on TSV Structure for 3D Stack Packaging

TSV結構三維堆疊構裝技術之電性可靠度分析

Hsien Chung(鍾賢) ； Chung-Yen Ni(倪中彥) ； Ben-Je Lwo(羅本喆)

《中正嶺學報》 45卷1期 (2016/05) Pp. 1-8

摘要

To assess the reliability behavior of a typical TSV structure, this study performed reliability tests on self-design samples with three types of the TSV test-keys, which includes the Kelvin structure, the via-chain structure, and the meander metal lines. With enough number of the samples for statistic analyses, resistance of the test samples were first found increased after the preconditioning process. The reliability tests were next carried out according to the JEDEC standards, and the Weibull parameters for the testing samples were then extracted from the testing data to predict the lifetime performance on the samples. Finally, OM and SEM observations on the test samples are given for failure analyses.

關鍵字

TSV (Through Silicon Via) ； Reliability ； Temperature Cycling Test (TCT) ； Temperature Humidity Cycling Test (THCT)

並列摘要

直通矽晶穿孔技術能提供上下垂直導通之路徑，成為具有三維堆疊構裝技術之潛力。為了解直通矽晶穿孔三維堆疊構裝技術之可靠度問題，本研究開發製作Kelvin結構、鏈狀式結構路徑總電阻及金屬導線電阻等三種測試鍵，並依據JEDEC規範針對三種測試鍵執行溫度循環測試及熱濕循環測試分析，從中量測TSV堆疊架構產品之生命週期，進一步分析可靠度模型及萃取韋伯參數。最後，使用光學顯微鏡與掃描式電子顯微鏡觀察測試元件損害分析，提供直通矽晶穿孔技術可靠度分析參考依據。

並列關鍵字

直通矽晶穿孔技術 ； 可靠度 ； 溫度循環測試 ； 熱濕循環測試