適用於K頻段調頻連續波雷達系統中 以傳輸線為基礎之CMOS可變增益 低雜訊放大器的設計與應用

Design and Application of CMOS Transmission Line-Based Variable-Gain Low-Noise Amplifiers in K-Band FMCW Radar System

吳育修(Yu-Hsiu Wu)

指導教授 ： 莊晴光

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2008年)

https://doi.org/10.6342/NTU.2008.00155

摘要

在本論文中，提出了可以改進增益-面積效率的設計方法，並且實作在K頻段以合成的近橫向電磁場傳輸線為基礎之可變增益低雜訊放大器。此放大器使用0.18微米CMOS製程製造，量測結果顯示晶片面積為0.39 x 0.48 mm2，消耗電流為24mA並使用1.8V的偏壓，可變增益範圍由最大增益為28dB帶有8dB的最低雜訊指數到最小增益為11dB帶有9dB的最低雜訊指數，量測的1dB壓縮點為 -21dBm，三階交叉點為 -1.5dBm。

關鍵字

K頻段 ； 傳輸線 ； 可變增益 ； 低雜訊 ； 放大器 ； CMOS

並列摘要

In this thesis, the design methodology for improving the gain-area efficiency of the monolithic K-band transmission line-based variable-gain low-noise amplifier incorporated with synthetic quasi-TEM line, is presented and fabricated by the standard 0.18-μm 1P6M CMOS technology. The size of the prototype is 0.39 X 0.48 mm2, and the quiescent current is 24mA from a 1.8V supply. The gain-controlled range is from maximum gain 28dB with minimum noise figure of 8dB to minimum gain 11dB with minimum noise figure of 9dB. The input 1-dB compression point (P1dB_IN) and the input third-order intercept point (IIP3) are -21dBm and -1.5dBm, respectively.

並列關鍵字

K-band ； transmission line ； variable-gain ； low-noise ； amplifier ； CMOS

參考文獻

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