- 學位論文
低溫化學氣相成長介電層材料及其應用
Low-Temperature Chemical Vapor Deposition of Dielectric Materials and Their Applications
摘要
軟性電子與顯示器已然是科技發展的趨勢，其可撓折、輕便化、能縮小體積便於攜帶的特點使電子產品延伸出了許多新穎的應用，電子紙、軟性照明、穿戴式顯示器都將逐漸進入我們生活中。適用於軟性電子的介電薄膜扮演相當重要的角色，不論是在薄膜電晶體的閘極介電層、OLED的氣體阻擋層、軟性基板的緩衝層抑或是軟性電子元件的保護層都需要使用到介電薄膜，因此，能低溫成長高品質的介電薄膜是軟性電子發展的關鍵技術。 以HMDSO和O2所沉積特性介於silicone與silica之間的有機-無機複合薄膜，能夠在低溫(接近室溫)下成長且仍具高品質特性，緻密但撓折下不易脆、碎，於可見光區透明，有高崩潰電壓與低漏電流密度，良好的水氧阻隔效果，此外，相較於傳統沉積SiOx所使用的SiH4，HMDSO較為無毒且環保，十分適合作為軟性電子的應用。 本論文使用感應耦合電漿氣相沉積法以HMDSO和O2沉積複合薄膜，對不同成長條件的複合薄膜進行物理、化學、光學及電特性上的觀測與分析，了解其特性參數的變化趨勢，同時也對複合薄膜/PEN基板的水氣阻隔效果做一研究，最後將其應用於非晶相氧化銦鎵鋅薄膜電晶體中的閘極介電層，並與SiOx為閘極介電層之薄膜電晶體作一比較。
並列摘要
Flexible electronics and display technology is an inevitable trend. Their properties of bendability, light weight, and portability largely extend the applications of electronic products. Electronic paper, flexible lighting, and wearable display will soon be part of our life. Dielectric films play an important role in the flexible electronics. All the gate insulator layer of TFTs, the gas barrier layer of OLEDs, the buffer layer of flexible substrates, and the passivation layer of flexible electronic devices require dielectric films. Therefore, dielectric films with high quality and low process temperature is the key technology of flexible electronics. The silicone-silica organic-inorganic hybrid films, which are grown from the mixed gas precursor of HMDSO and O2, could be grown at low temperatures – near the room temperature – and still maintains the film quality. It’s dense but not brittle. It is also highly transparent in the visible region. High breakdown field, low leakage current, and good water vapor and oxygen resistance are all its advantages. Moreover, HMDSO is nontoxic and environmental friendly compared to SiH4, which is usually used in conventional SiOx deposition. All of these properties suggest that the hybrid films are quite suitable for applications in flexible electronics. In our studies, we use inductively coupled plasma chemical vapor deposition to grow organic-inorganic hybrid films from HMDSO and O2. We measured and analyzed the physical, chemical, optical and electrical properties of the films under different deposition conditions to find the correlation. Also, the water vapor transmission rate of the hybrid film/PEN substrate was measured. Finally, we used the hybrid film as the gate dielectric layer of a-IGZO TFT, and compared its characteristics with the one with the SiOx gate dielectric.
參考文獻
延伸閱讀
- 洪煒捷（2019）。不同低介電常數材料電性及可靠度之研究〔碩士論文，國立暨南國際大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0020-2208201812393500
- Chiou, Y. K. (2007). 原子層化學氣相沉積之高介電薄膜於金屬-氧化物-半導體與金屬-絕緣層-金屬結構下之應用 [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-1411200715120474
- 王仁佑（2011）。低介電材料之製備及其性質研究〔博士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2011.00077
- 楊仁泓、黃英修、李春穎、林招松（2005）。Localized Electrochemical Deposition Process and Mechanical Property Measurements for One-Dimensional Structure。材料科學與工程，37(2)，93-99。https://doi.org/10.6409/JMSE.200506.0093
- Johnson, B. O., Rees, W. S., & Jr. (1999). Metal-Organic Chemical Vapor Deposition of Superconducting Metal Oxides. 中央研究院化學研究所集刊, (46), 59-80. https://doi.org/10.6522/BICAS.1999.46.6